1
Katsuyuki Musaka
Katsuyuki Musaka, Shinzuke Mizuno: Method of forming a thin film for a semiconductor device. Applied Materials, Birgit E Morris, Michael B Einschlag, November 5, 1996: US05571571 (32 worldwide citation)


A method of forming conformal, high quality silicon oxide films that can be deposited over closely spaced, submicron lines and spaces without the formation of voids, comprises forming a plasma of TEOS and a selected halogen-containing gas in certain ratios. By proper control of the energy sources th ...


2
Katsuyuki Musaka
Katsuyuki Musaka: Method of forming a thin film for a semiconductor device. Applied Materials, Birgit Morris, August 19, 2003: US06607790 (3 worldwide citation)


The present invention relates to a plasma-enhanced chemical vapor deposition (PECVD) method of depositing a thin layer of a material, such as silicon dioxide, on the surface of a body, such as a semiconductor substrate. The method includes forming in a deposition chamber a plasma by means of two ele ...


3
Dan Maydan, Sasson Somekh, David N Wang, David Cheng, Masato Toshima, Isaac Harari, Peter D Hoppe: Multi-chamber integrated process system. Applied Materials, Philip A Dalton, August 28, 1990: US04951601 (683 worldwide citation)


An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuu ...


4
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process. Applied Materials, Robert J Stern, Philip A Dalton, March 19, 1991: US05000113 (534 worldwide citation)


A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


5
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method for depositing an amorphous carbon layer. Applied Materials, Moser Patterson and Sheridan, June 3, 2003: US06573030 (435 worldwide citation)


A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


6
Avi Tepman, Howard Grunes, Sasson Somekh, Dan Maydan: Staged-vacuum wafer processing system and method. Applied Materials, Philip A Dalton, February 16, 1993: US05186718 (431 worldwide citation)


A processing system for workpieces such as semiconductor wafers is disclosed which incorporates multiple, isolated vacuum stages between the cassette load lock station and the main vacuum processing chambers. A vacuum gradient is applied between the cassette load lock and the main processing chamber ...


7
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: CVD of silicon oxide using TEOS decomposition and in-situ planarization process. Applied Materials, Schlemmer Dalton Associates, October 10, 1989: US04872947 (341 worldwide citation)


A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


8
Manoocher Birang, Allan Gleason, William L Guthrie: Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus. Applied Materials, Fish & Richardson, April 13, 1999: US05893796 (309 worldwide citation)


The polishing pad for a chemical mechanical polishing apparatus and a method of making the same. The polishing pad has a covering lawyer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second ...


9
Jun Zhao, Tom Cho, Charles Dornfest, Stefan Wolff, Kevin Fairbairn, Xin S Guo, Alex Schreiber, John M White: CVD Processing chamber. Applied Materials, Janis Biksa, September 24, 1996: US05558717 (307 worldwide citation)


A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to ...


10
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Process for PECVD of silicon oxide using TEOS decomposition. Applied Materials, Philip A Dalton, January 9, 1990: US04892753 (282 worldwide citation)


A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...



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