1
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Arizona Board of Regents, Snell & Wilmer, June 2, 1998: US05761115 (358 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


2
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Arizona Board of Regents, Snell & Wilmer, July 4, 2000: US06084796 (265 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


3
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Arizona Board of Regents, Snell & Wilmer, June 22, 1999: US05914893 (240 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


4
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Snell & Wilmer L, April 20, 1999: US05896312 (228 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


5
Michael N Kozicki: Programmable structure, an array including the structure, and methods of forming the same. Axon Technologies Corporation, Snell & Wilmer L, January 30, 2007: US07169635 (127 worldwide citation)


A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the ...


6
Michael N Kozicki: Programmable microelectronic device, structure, and system and method of forming the same. Axon Technologies Corporation, Snell & Wilmer L, January 10, 2006: US06985378 (70 worldwide citation)


A microelectronic programmable structure suitable for storing information and a method of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applyi ...


7
Michael N Kozicki: Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same. Axon Technologies Corporation, Snell & Wilmer L, November 30, 2004: US06825489 (69 worldwide citation)


A microelectronic programmable structure suitable for storing information and a method of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applyi ...


8
Michael N Kozicki, Maria Mitkova: Microelectronic programmable device and methods of forming and programming the same. Axon Technologies Corporation, Snell & Wilmer L, July 29, 2008: US07405967 (64 worldwide citation)


A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, an ...


9
Michael N Kozicki: Programmable structure, an array including the structure, and methods of forming the same. Axon Technologies Corporation, Snell & Wilmer L, August 9, 2005: US06927411 (52 worldwide citation)


A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the ...


10
Michael N Kozicki, Muralikrishnan Balakrishnan: Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same. Axon Technologies Corporation, Snell & Wilmer L, May 13, 2008: US07372065 (44 worldwide citation)


A microelectronic programmable structure suitable for storing information, a device including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the s ...



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