1
Lyons Christopher F, Babcock Carl P, Kye Jongwook: Immersion lithographic process using a conforming immersion medium. Advanced Micro Devices, Lyons Christopher F, Babcock Carl P, Kye Jongwook, DRAKE Paul S, July 7, 2005: WO/2005/062128 (354 worldwide citation)


A method of making a device using a lithographic system (10) having a lens (32) from which an exposure pattern (24) is emitted. A conforming immersion medium (26) can be positioned between a photo resist layer (34) and the lens. The photo resist layer, which can be disposed over a wafer, and the len ...


2
Kye Jongwook, Babcock Carl P, Lyons Christopher F: Pellicle for a lithographic lens. Advanced Micro Devices, Kye Jongwook, Babcock Carl P, Lyons Christopher F, DRAKE Paul S, September 15, 2005: WO/2005/085956 (2 worldwide citation)


Disclosed are a method and apparatus for preventing contamination in a lithographic apparatus (10) including a projection system (24). The lithographic apparatus (10) images an irradiated portion of a mask (22) onto a target portion (40) of a substrate (28). A pellicle (32, 36) is placed with respec ...


3
Oglesby Jane V, Lyons Christopher F, Subramanian Ramkumar, Hui Angela T, Ngo Minh Van, Pangrle Suzette: Spin on polymers for organic memory devices. Advanced Micro Devices, Oglesby Jane V, Lyons Christopher F, Subramanian Ramkumar, Hui Angela T, Ngo Minh Van, Pangrle Suzette, sCOLLOPY Daniel R, February 17, 2005: WO/2005/015635


A method of making organic memory cells (104) made of two electrodes (106, 108) with a controllably conductive media (110) between the two electrodes (106, 108) is disclosed. The controllably conductive media (110) contains an organic semiconductor layer (112) and passive layer (114). The organic se ...


4
Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V, sCOLLOPY Daniel R, February 3, 2005: WO/2005/010892


One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


5
Lyons Christopher F, Chang Mark S, Lopatin Sergey D, Subramanian Ramkumar, Cheung Patrick, Ngo Minh Van, Oglesby Jane V: Sidewall formation for high density polymer memory element array. Advanced Micro Devices, Lyons Christopher F, Chang Mark S, Lopatin Sergey D, Subramanian Ramkumar, Cheung Patrick, Ngo Minh Van, Oglesby Jane V, sDRAKE Paul S, May 19, 2005: WO/2005/045935


Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing various depositing and etching processes. The side wall memory cell ...


6
Gabriel Calvin T, Lyons Christopher F, Plat Marina V, Subramanian Ramkumar: Contact etch resistant spacers. Advanced Micro Devcies, Gabriel Calvin T, Lyons Christopher F, Plat Marina V, Subramanian Ramkumar, sDRAKE Paul S, July 7, 2005: WO/2005/062372


An apparatus and a method of fabricating a semiconductor device (10) including the steps of forming a gate dielectric layer (20) on a semiconductor substrate (12); forming a gate electrode (18) over the gate dielectric layer (20) wherein the gate electrode (20) defines a channel (22) interposed betw ...


7
Lyons Christopher F: Polymer dielectrics for memory element array interconnect. Advanced Micro Devices, Lyons Christopher F, DRAKE Paul S, November 3, 2005: WO/2005/104188


Disclosed are semiconductor devices (100) containing a polymer dielectric (103) and at least one active device (104) containing an organic semiconductor material (112) and a passive layer (114). Also disclosed are semiconductor devices (100) further containing a conductive polymer (106 and/or 108). ...



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