1
Nathaniel Brese Martin Bayes Martin Bayes
Nathaniel E Brese, Edit Szocs, Felix J Schwager, Michael P Toben, Martin W Bayes: Electrochemically deposited indium composites. Rohm and Haas Electronic Materials, John J Piskorski, November 19, 2013: US08585885


Electrochemically deposited indium composites are disclosed. The indium composites include indium metal or an alloy of indium with one or more ceramic materials. The indium composites have high bulk thermal conductivities. Articles containing the indium composites also are disclosed.


2
Nathaniel Brese Martin Bayes Martin Bayes
Nathaniel E Brese, Edit Szocs, Felix J Schwager, Michael P Toben, Martin W Bayes: Electrochemically deposited indium composites. Rohm and Haas Electronic Materials, John J Piskorski, Rohm and Haas Electronic Materials, March 19, 2009: US20090075102-A1


Electrochemically deposited indium composites are disclosed. The indium composites include indium metal or an alloy of indium with one or more ceramic materials. The indium composites have high bulk thermal conductivities. Articles containing the indium composites also are disclosed.


3
Jim Felton Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Artashes Amamchyan, Michael Brendan Power, Ronald L DiCarol Jr, James Edward Felton: Alkyl group VA metal compounds. Rohm and Haas Electronic Materials, S Matthew Cairns, September 6, 2005: US06939983


A method of preparing Group VA organometal compounds in high yield and high purity by the reaction of a Grignard reagent with a Group VA metal halide in certain ethereal solvents is provided. A method of preparing Group VA organometal hydrides is also provided.


4
David Mosley Charles Szmanda
Kevin Calzia, David Mosley, Charles Szmanda, David L Thorsen: Group 6a/Group 3a ink and methods of making and using same. Rohm And Haas Electronic Materials, November 24, 2011: US20110287614-A1


A selenium/Group 3a ink, comprising (a) a selenium/Group 3a complex which comprises a combination of, as initial components: a selenium component comprising selenium; an organic chalcogenide component having a formula selected from RZ—Z′R′ and R2—SH; wherein Z and Z′ are each independently selected ...


5
David Mosley Charles Szmanda
Kevin Calzia, David W Mosley, Charles R Szmanda, David L Thorsen: Selenium/Group 1b ink and methods of making and using same. Rohm And Haas Electronic Materials, March 31, 2011: US20110076799-A1


A selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ—Z′R′ and R2—SH, a Group 1b component and a liquid carrier; wherein Z and Z′ are each independently selected from sulfur, selenium a ...


6
Garo Khanarian Charles Szmanda
Garo Khanarian, Nicola Pugliano, Charles R Szmanda, Jae Hyung Yi: Thin film photovoltaic cell. Rohm and Haas Electronic Materials, September 29, 2011: US20110232758-A1


A thin film photovoltaic cell is provided having a substrate; a back contact provided on the substrate; a p-type semiconductor absorber layer provided on the back contact; a n-type semiconductor layer provided on the p-type semiconductor absorber layer; a dielectric organic material layer provided o ...


7
David Mosley Charles Szmanda
Kevin Calzia, David W Mosley, Charles R Szmanda, David L Thorsen: Dichalcogenide ink containing selenium and methods of making and using same. Rohm And Haas Electronic Materials, March 31, 2011: US20110076798-A1


A selenium ink comprising, as initial components: a liquid carrier; a selenium component comprising selenium; and, an organic chalcogenide component having a formula selected from RZ—Z′R′ and R2—SH, a Group 1b component and a liquid carrier; wherein Z and Z′ are each independently selected from sulf ...


8
David Mosley Charles Szmanda
David Mosley, Kevin Calzia, Charles Szmanda: Dichalcogenide Selenium Ink and Methods of Making and Using Same. Rohm And Haas Electronic Materials, Rohm And Haas Electronic Materials, January 27, 2011: US20110020981-A1


A selenium ink comprising a chemical compound having a formula RZ-Sex-Z′R′ stably dispersed in a liquid carrier is provided, wherein the selenium ink is hydrazine free and hydrazinium free. Also provided are methods of preparing the selenium ink and of using the selenium ink to deposit selenium on a ...


9
Dana Gronbeck Jeffrey Calvert
Michael K Gallagher, Dana A Gronbeck, Timothy G Adams, Jeffrey M Calvert: Electronic devices having air gaps. Rohm and Haas Electronic Materials, Jonathan D Baskin, May 25, 2010: US07723850 (3 worldwide citation)


A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an elec ...


10
Nathaniel Brese Angelo Lamola
Angelo A Lamola, Nathaniel E Brese: Electronic device manufacture. Rohm and Haas Electronic Materials, S Matthew Cairns, May 9, 2006: US07041331 (1 worldwide citation)


Compositions suitable for use as underfill materials in an integrated circuit assembly are provided. Also provided are methods of preparing integrated circuit assemblies containing certain underfill materials as well as electronic devices containing such integrated circuit assemblies.



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