1
Phil Salzman: Lift pin guidance apparatus. Applied Materials, Applied Materials, December 15, 1998: US05848670 (39 worldwide citation)


Apparatus for lifting a wafer, or other such workpiece, from the surface of pedestal in a semiconductor wafer processing system. More specifically, the apparatus relates to a lift pin that is guided by a guide bushing and a guide pin. Preferably, the lift pin is hollow and is slideably engaged with ...


2
Roderick Craig Mosely, Hong Zhang, Fusen Chen, Ted Guo: Low temperature integrated metallization process and apparatus. Applied Materials, Applied Materials, March 2, 1999: US05877087 (18 worldwide citation)


The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a s ...


3
Ravi Jallepally, Shih Hung Li, Alain Duboust, Jun Zhao, Liang Yuh Chen, Daniel A Carl: Apparatus and method for fast-cycle atomic layer deposition. Applied Materials, Applied Materials, June 12, 2003: US20030106490-A1 (5 worldwide citation)


Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further ...


4
Sean M Seutter, Michael X Yang, Ming Xi: Formation of a tantalum-nitride layer. Applied Materials, Applied Materials, August 8, 2002: US20020106846-A1 (5 worldwide citation)


A method of forming a tantalum-nitride layer (204) for integrated circuit fabrication is disclosed. Alternating or co-reacting pulses of a tantalum containing precursor and a nitrogen containing precursor are provided to a chamber (100) to form layers (305, 307) of tantalum and nitrogen. The nitroge ...


5
Fusen Chen, Ling Chen: Atomically thin highly resistive barrier layer in a copper via. Applied Materials, Applied Materials, Patent Legal Department, August 29, 2002: US20020117399-A1 (5 worldwide citation)


A method of forming a copper via and the resultant structure. A thin layer of an insulating barrier material, such as aluminum oxide or tantalum nitride, is conformally coated onto the sides and bottom of the via hole, for example, by atomic layer deposition (ALD) to a thickness of less than 5 nm, p ...


6
Liang Yuh Chen, Yuchun Wang, Yan Wang, Alain Duboust, Daniel A Carl, Ralph Wadensweiler, Manoocher Birang, Paul D Butterfield, Rashid Mavliev, Stan D Tsai: Conductive polishing article for electrochemical mechanical polishing. Applied Materials, August 29, 2002: US20020119286-A1 (5 worldwide citation)


An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a ...


7
Manoocher MB Birang, Allan Gleason, William L Guthrie: Forming a transparent window in a polishing pad for a chemical mehcanical polishing apparatus. Applied Materials a Delaware corporation, Applied Materials, November 1, 2001: US20010036805-A1 (4 worldwide citation)


The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second ...


8
Ling Chen, Vincent Ku, Dien Yeh Wu, Hua Chung, Alan Ouye, Norman Nakashima: Gas delivery apparatus and method for atomic layer deposition. Applied Materials, May 1, 2003: US20030079686-A1 (4 worldwide citation)


One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the ...


9
Jeong Soo Byun, Alfred Mak: Method of forming refractory metal nitride layers using chemisorption techniques. Applied Materials, July 4, 2002: US20020086111-A1 (4 worldwide citation)


A method of forming a refractory metal nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the refractory metal nitride layer is formed by chemisorbing monolayers of a hydrazine-based compound and one or more refractory metal compounds onto a substrate. In an alternate ...


10
Chen An Chen, Avgerinos Gelatos, Michael X Yang, Ming Xi, Mark M Hytros: Apparatus and method for plasma assisted deposition. Applied Materials, Applied Materials, July 31, 2003: US20030143328-A1 (3 worldwide citation)


Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower ...



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