1
Katsuyuki Musaka
Katsuyuki Musaka: Method of forming a thin film for a semiconductor device. Applied Materials, Birgit Morris, August 19, 2003: US06607790 (3 worldwide citation)


The present invention relates to a plasma-enhanced chemical vapor deposition (PECVD) method of depositing a thin layer of a material, such as silicon dioxide, on the surface of a body, such as a semiconductor substrate. The method includes forming in a deposition chamber a plasma by means of two ele ...


2
Kenneth S Collins, Craig A Roderick, John R Trow, Chan Lon Yang, Jerry Y Wong, Jeffrey Marks, Peter R Keswick, David W Groechel, Jay D Pinson II, Tetsuya Ishikawa, Lawrence C Lei, Masato M Toshima, Gerald Z Yin: Silicon scavenger in an inductively coupled RF plasma reactor. Applied Materials, Birgit Morris, Peter J Sgarbossa, September 17, 1996: US05556501 (160 worldwide citation)


A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy a ...


3
David Nin Kou Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process. Applied Materials, Birgit Morris, January 2, 2001: US06167834 (149 worldwide citation)


A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


4
Kenneth S Collins, Chan Lon Yang, Jerry Yuen Kui Wong, Jeffrey Marks, Peter R Keswick, David W Groechel: Plasma reactor and processes using RF inductive coupling and scavenger temperature control. Applied Materials, Birgit Morris, March 30, 1999: US05888414 (56 worldwide citation)


A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selecti ...


5
Nicholas Bright, Paul Anthony Burfield, John Pontefract, Bernard Francis Harrison, Peter Meares, David R Burgin, Andrew Stephen Devaney, Peter Torin Kindersley: Ion implantation apparatus having increased source lifetime. Applied Materials, Birgit Morris, March 23, 1999: US05886355 (42 worldwide citation)


Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a means of shielding, thereby reducing the formation of a conductive layer on said ins ...


6
Kenneth S Collins, Chan Lon Yang, Jerry Yuen Kui Wong, Jeffrey Marks, Peter R Keswick, David W Groechel, Craig A Roderick, John R Trow, Tetsuya Ishikawa, Jay D Pinson II, Lawrence Chang Lai Lei, Masato M Toshima, Gerald Zheyao Yin: Plasma reactor using inductive RF coupling, and processes. Applied Materials, Birgit Morris, Joseph Bach, February 11, 2003: US06518195 (40 worldwide citation)


A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy a ...


7
Kenneth S Collins, Craig A Roderick, John R Trow, Chan Lon Yang, Jerry Yuen Kui Wong, Jeffrey Marks, Peter R Keswick, David W Groechel, Jay D Pinson II, Tetsuya Ishikawa, Lawrence Chang Lai Lei, Masato M Toshima: Process used in an RF coupled plasma reactor. Applied Materials, Birgit Morris, May 30, 2000: US06068784 (38 worldwide citation)


A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy a ...


8
Kenneth S Collins, Chan Lon Yang, Jerry Yuen Kui Wong, Jeffrey Marks, Peter R Keswick, David W Groechel: Method for processing substrates using gaseous silicon scavenger. Applied Materials, Birgit Morris, Joseph Bach, September 3, 2002: US06444137 (38 worldwide citation)


A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selecti ...


9
Yiqiong Wang, Maocheng Li, Shaoher Pan: Etch process for forming high aspect ratio trenched in silicon. Applied Materials, Birgit Morris, October 3, 2000: US06127278 (33 worldwide citation)


A multistep etch process for forming high aspect ratio trenches in silicon having a silicon oxide and/or silicon nitride hardmask. In a first step, an etch composition of HBr and oxygen is used, depositing a passivation layer on the sidewalls and producing slightly tapered openings. In the second st ...


10
Kenneth S Collins, Craig A Roderick, John R Trow, Chan Lon Yang, Jerry Yuen Kui Wong, Jeffrey Marks, Peter R Keswick, David W Groechel, Jay D Pinson II, Tetsuya Ishikawa, Lawrence Chang Lai Lei, Masato M Toshima, Gerald Zheyao Yin: Plasma etch processes. Applied Materials, Birgit Morris, June 26, 2001: US06251792 (28 worldwide citation)


A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy a ...



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