1
Katherina Babich
Marie Angelopoulos, Katherina E Babich, David R Medeiros, Wayne M Moreau: Multifunctional polymeric materials and use thereof. International Business Machines Corporation, Daniel P Morris, Connolly Bove Lodge & Hutz, February 3, 2004: US06686124 (21 worldwide citation)


A multifunctional polymer comprising a polymeric chain having chromophore groups and cross-linking sites is suitable as a resist material and especially as the underlayer for bilayer and top surface imaging strategies. The multifunctional polymer can function as an antireflective coating, planarizin ...


2
Katherina Babich
Katherina E Babich, Sean D Burns, Elbert E Huang, Arpan P Mahorowala, Dirk Pfeiffer, Karen Temple: Antireflective composition and process of making a lithographic structure. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris, February 5, 2008: US07326442 (6 worldwide citation)


An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1≦x≦2; 1≦y≦5; 1≧0; m>0; n>0; R is a chromophore, M is a metal selected from Grou ...


3
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a lithographic structure using antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris Esq, October 23, 2012: US08293454 (2 worldwide citation)


A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a trans ...


4
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Richard A Conti, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a semiconductor device using multiple antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris, February 3, 2009: US07485573 (1 worldwide citation)


A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements s ...


5
Katherina Babich
Marie Angelopoulos, Edward D Babich, Inna V Babich, Katherina E Babich, James J Bucchignano, Karen E Petrillo, Steven A Rishton: Forming a pattern of a negative photoresist. International Business Machines Corporation, Daniel P Morris, Connolly Bove Lodge & Hutz, September 9, 2003: US06617086 (1 worldwide citation)


A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.


6
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Richard A Conti, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a semiconductor device using multiple antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris, June 28, 2011: US07968270


A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements s ...


7
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Richard A Conti, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a semiconductor device using multiple antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, August 23, 2007: US20070196748-A1


A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements s ...


8
Katherina Babich
Marie Angelopoulos, Edward D Babich, Inna V Babich, Katherina E Babich, James J Bucchignano, Karen E Petrillo, Steven A Rishton: Forming a pattern of a negative photoresist. International Business Machines Corporation, Connolly Bove Lodge & Hutz, September 5, 2002: US20020123010-A1


A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.


9
Katherina Babich
Katherina E Babich, Sean D Burns, Elbert E Huang, Arpan P Mahorowala, Dirk Pfeiffer, Karen Temple: Antireflective composition and process of making a lithographic structure. International Business Machines Corporation, Connolly Bove Lodge & Hutz, January 18, 2007: US20070015083-A1


An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1≦x≦2; 1≦y≦5; 1≧0; m>0; n>0; R is a chromophore, M is a metal selected from Grou ...


10
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a lithographic structure using antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, March 5, 2009: US20090061355-A1


A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a trans ...



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