1
Shunpei Yamazaki, Hisashi Ohtani, Toshiji Hamatani: Semiconductor device and manufacturing method therefor. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, August 14, 2001: US06274887 (395 worldwide citation)


An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel ...


2
Robert N Daggar: Multimedia electronic wallet with generic card. Eric J Robinson, Sixbey Friedman Leedom & Ferguson, May 5, 1998: US05748737 (383 worldwide citation)


An electronic wallet is disclosed which provides multiple data media interfaces. Standard interfaces will include a smart card reader/writer, a magnetic reader/writer, a radio frequency transceiver and a user interface. A generic card is insertable into an electronic wallet to provide magnetic or sm ...


3
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Active Matry Display. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, September 4, 2001: US06285042 (289 worldwide citation)


A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


4
Shunpei Yamazaki: Method of manufacturing a semiconductor device. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, April 30, 2002: US06380046 (268 worldwide citation)


There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crysta ...


5
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Semiconductor thin film transistor with crystal orientation. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, January 1, 2002: US06335541 (247 worldwide citation)


A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


6
Ronald J Perholtz, Eric J Elmquest: System and method for monitoring computer environment and operation. Fox Network Systems, Evan R Smith, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, October 15, 1996: US05566339 (238 worldwide citation)


An advanced electronic alert system for monitoring computer network(s), environment, security and the status of tasks being processed by a computer. The system stores voice recorded and text alert messages on computer readable magnetic media; automatically dials designated persons when alert situati ...


7
Masanori Minamio, Kunikazu Takemura, Yuichiro Yamada, Fumito Ito, Takahiro Matsuo: Leadframe for use in manufacturing a resin-molded semiconductor device. Matsushita Electronics Corporation, Eric J Robinson, Nixon Peabody, March 27, 2001: US06208020 (238 worldwide citation)


A resin-molded semiconductor device includes: signal leads; a die pad with a central portion elevated above a peripheral portion thereof; support leads, each including a raised portion higher in level than the other portions; and DB paste for use in die bonding. All of these members are encapsulated ...


8
Shunpei Yamazaki: Electro-optical device and method for manufacturing the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, December 15, 1998: US05849601 (224 worldwide citation)


An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided ther ...


9
Shunpei Yamazaki: LCD having a peripheral circuit with TFTs having the same structure as TFTs in the display region. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, December 23, 1997: US05701167 (219 worldwide citation)


An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided ther ...


10
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura: Semiconductor device having improved crystal orientation. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson, January 2, 1996: US05481121 (218 worldwide citation)


Nickel is introduced to a peripheral circuit section and a picture element section on an amorphous silicon film to crystallize them. After forming gate electrodes and others, a source, drain and channel are formed by doping impurities, and laser is irradiated to improve the crystallization. After th ...



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