1
Akira Okita, Toru Koizumi, Masanori Ogura, Shin Kikuchi, Tetsuya Itano: Solid state image pickup device and camera. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, January 22, 2008: US07321110 (86 worldwide citation)


An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric con ...


2
Akira Okita: Semiconductor display device with a hydrogen supply and hydrogen diffusion barrier layers. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, May 5, 1998: US05747830 (80 worldwide citation)


The invention provides a semiconductor device having a low threshold voltage and capable of operating at a high speed, and also provides an active matrix display device including such a semiconductor device. The invention also provides a method of producing such a semiconductor device and an active ...


3
Toru Koizumi, Akira Okita, Masanori Ogura, Shin Kikuchi, Tetsuya Itano: Solid state image pickup device and camera. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, December 2, 2008: US07460162 (67 worldwide citation)


A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region include ...


4
Masanori Ogura, Toru Koizumi, Akira Okita, Tetsuya Itano, Shin Kikuchi: Solid state image pickup device and camera. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, August 5, 2008: US07408210 (63 worldwide citation)


An object of the present invention is to simultaneously realize the enlargement of a dynamic range and the downsizing of a pixel. An additional capacitor CS is composed by using: a first capacitor formed of a first diffusion layer, a second diffusion layer and a P well by layering the P well, the fi ...


5
Akira Okita, Katsuhito Sakurai, Hiroki Hiyama, Hideaki Takada: Photoelectric conversion apparatus and image pick-up system using the photoelectric conversion apparatus. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, March 6, 2007: US07187052 (56 worldwide citation)


A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a photoelectric conversion apparatus according to the present invention includes a photodiode for converting light ...


6
Tetsuya Itano, Toru Koizumi, Shin Kikuchi, Akira Okita, Masanori Ogura: Image pickup device and camera with expanded dynamic range. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, June 23, 2009: US07550793 (50 worldwide citation)


The image pickup device of the invention has a path deeper in a semiconductor substrate, than a region wherein a channel is formed, upon turning on a first MOS transistor, under a gate thereof. The path is arranged by forming a P-type layer for forming a potential barrier, within a P-type well exclu ...


7
Yasutomo Fujiyama, Mitsuhiro Ishii, Senju Kanbe, Takao Yonehara, Toru Takisawa, Akira Okita, Kiyofumi Sakaguchi, Takanori Watanabe, Kazuo Kokumai: Anodization apparatus with supporting device for substrate to be treated. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, October 17, 1995: US05458755 (48 worldwide citation)


An anodization apparatus for anodizing the surface of a semiconductor substrate by supporting the semiconductor substrate between a pair of electrodes in an electrolytic solution and applying a voltage across the pair of electrodes. The anodization apparatus includes an elastic sealing member for su ...


8
Akira Okita, Hiroki Hiyama, Hideaki Takada: Image pickup apparatus and system with low parasitic capacitance between floating diffusion area of a pixel and output line of an adjacent pixel. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, July 7, 2009: US07557847 (47 worldwide citation)


The invention is to reduce a color mixing resulting from influences of adjacent pixels. The invention provides a solid-state image pickup apparatus including plural pixels each including a PN junction area constituting a photoelectric conversion area, a floating diffusion area for holding a charge o ...


9
Akira Okita, Masanori Ogura, Takanori Watanabe: Photoelectric conversion element having a plurality of semiconductor regions and including conductive layers provided on each isolation element region. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, November 25, 2008: US07456880 (42 worldwide citation)


To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectroc conversion elements and providing a high sensitivity and a low dark current even in-a high-speed readout operation. A well is formed on a wafer, and diffusion layers are f ...


10
Akira Okita, Hiroki Hiyama, Hideaki Takada: Solid state image pick-up device and image pick-up system. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, May 26, 2009: US07538804 (37 worldwide citation)


A solid state image pick-up device has shields for suppressing deterioration in a ratio of an output signal to output noises caused by crosstalks, suppressing deterioration in a ratio of the output signal to output noises caused by a coupling capacity, and suppressing deterioration in a ratio of the ...



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