1
Dan Maydan, Sasson Somekh, Ashok Sinha, Kevin Fairbairn, Christopher Lane, Kelly Colborne, Hari K Ponnekanti, W N: Ultra high throughput wafer vacuum processing system. Applied Materials, Patterson & Streets L, January 5, 1999: US05855681 (271 worldwide citation)


The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprin ...


2
Robin Cheung, Ashok Sinha, Avi Tepman, Dan Carl: Apparatus for electro-chemical deposition with thermal anneal chamber. Applied Materials, Thomason Moser & Patterson, October 24, 2000: US06136163 (258 worldwide citation)


The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The elec ...


3
Moris Kori, Alfred W Mak, Jeong Soo Byun, Lawrence Chung Lai Lei, Hua Chung, Ashok Sinha, Ming Xi: Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques. Applied Materials, Moser Patterson & Sheridan, April 22, 2003: US06551929 (234 worldwide citation)


A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, ...


4
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek: Thermally floating pedestal collar in a chemical vapor deposition chamber. Applied Materials, Charles S Guenzer, Michael B Einschlag, December 8, 1998: US05846332 (165 worldwide citation)


A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal sup ...


5
Ashok Sinha, Mei Chang, Ilya Perlov, Karl A Littau, Alan F Morrison, Lawrence Chung Lai Lei: Chemical vapor deposition of a thin film onto a substrate. Applied Materials, Patterson & Associates, January 5, 1999: US05856240 (117 worldwide citation)


Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor m ...


6
Kevin Fairbairn, Ashok Sinha: Multideck wafer processing system. Applied Materials, Townsend Townsend & Crew, January 23, 2001: US06176667 (96 worldwide citation)


A multideck wafer processing system is described for the treatment of semiconductor wafers. The system includes at least two process chambers stacked one above the other to provide for higher wafer throughput per unit area of cleanroom space. The stacked process chambers enable sharing of pressuriza ...


7
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek: Apparatus for substrate processing with improved throughput and yield. Applied Materials, Townsend and Townsend and Crew, October 10, 2000: US06129044 (61 worldwide citation)


The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage ...


8
Ashok Sinha, Mei Chang, Ilya Perlov, Karl Littau, Alan Morrison, Lawrence Chung Lai Lei: Chemical vapor deposition chamber. Applied Materials, Patterson & Streets L, December 9, 1997: US05695568 (59 worldwide citation)


An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of ...


9
Jun Zhao, Lee Luo, Xiao Liang Jin, Jia Xiang Wang, Talex Sajoto, Stefan Wolff, Leonid Selyutin, Ashok Sinha: High temperature, high flow rate chemical vapor deposition apparatus and related methods. Applied Materials, Townsend and Townsend and Crew, February 20, 2001: US06189482 (45 worldwide citation)


The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for ...


10
Ashok Sinha, Sasson Somekh: Process and apparatus for full wafer deposition. Applied Materials, John P Taylor, January 24, 1995: US05384008 (34 worldwide citation)


A process and apparatus is described for depositing a layer of material over the entire frontside surface of a semiconductor wafer without leaving residues on the backside of said wafer. A semiconductor wafer is placed on the surface of a first wafer support without contacting the frontside surface ...



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