1
Avi Tepman, Howard Grunes, Sasson Somekh, Dan Maydan: Staged-vacuum wafer processing system and method. Applied Materials, Philip A Dalton, February 16, 1993: US05186718 (437 worldwide citation)


A processing system for workpieces such as semiconductor wafers is disclosed which incorporates multiple, isolated vacuum stages between the cassette load lock station and the main vacuum processing chambers. A vacuum gradient is applied between the cassette load lock and the main processing chamber ...


2
Robin Cheung, Ashok Sinha, Avi Tepman, Dan Carl: Apparatus for electro-chemical deposition with thermal anneal chamber. Applied Materials, Thomason Moser & Patterson, October 24, 2000: US06136163 (258 worldwide citation)


The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The elec ...


3
Yezdi Dordi, Donald J Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Mark Lloyd, Joseph Stevens, Dan Marohl, Ho Seon Shin, Eugene Ravinovich, Robin Cheung, Ashok K Sinha, Avi Tepman, Dan Carl, George Birkmaier: Electro-chemical deposition system. Applied Materials, Thomason Moser & Patterson L, July 10, 2001: US06258220 (181 worldwide citation)


The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical dep ...


4
Avi Tepman, Howard Grunes, Dana Andrews: Physical vapor deposition clamping mechanism and heater/cooler. Applied Materials, John A Frazzini, July 20, 1993: US05228501 (174 worldwide citation)


A clamping ring and temperature regulated platen for clamping a wafer to the platen and regulating the temperature of the wafer. The force of the clamping ring against the wafer is produced by the weight of the clamping ring. A roof shields all but a few contact regions of the interface between the ...


5
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek: Thermally floating pedestal collar in a chemical vapor deposition chamber. Applied Materials, Charles S Guenzer, Michael B Einschlag, December 8, 1998: US05846332 (165 worldwide citation)


A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal sup ...


6
Avi Tepman, Gerald Zheyao Yin, Donald Olgado: Compartnetalized substrate processing chamber. Applied Materials, Janis Biksa, Donald Verplancken, Peter Sgarbossa, March 24, 1998: US05730801 (160 worldwide citation)


A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from ...


7
Be Van Vo, Salvador P Umotoy, Son N Trinh, Lawrence Chung Lai Lei, Sergio Edelstein, Avi Tepman, Chien Teh Kao, Kenneth Tsai: Resonant chamber applicator for remote plasma source. Applied Materials, Konrad Raynes Victor & Mann, August 5, 2003: US06603269 (108 worldwide citation)


An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The cham ...


8
Avi Tepman, Lawrence Chung lai Lei: Variable flow deposition apparatus and method in semiconductor substrate processing. Applied Materials, Konrad Raynes & Victor, August 17, 2004: US06777352 (89 worldwide citation)


In one embodiment of the present inventions, an exhaust outlet in a vacuum processing chamber includes a nonsealing flow restrictor which can facilitate rapid opening and closing of the flow restrictor in some applications. Because the flow restrictor is a nonsealing flow restrictor, the conductance ...


9
Praburam Gopalraja, Sergio Edelstein, Avi Tepman, Peijun Ding, Debabrata Ghosh, Nirmalya Maity: Alternate steps of IMP and sputtering process to improve sidewall coverage. Applied Materials, Moser Patterson & Sheridan, February 26, 2002: US06350353 (88 worldwide citation)


The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductiv ...


10
Homoyoun Talieh, Avi Tepman, Hoa Thi Kieu, Chien Rhone Wang: Material deposition method for integrated circuit manufacturing. Applied Materials, Rosenblum Parish & Isaacs, December 15, 1992: US05171412 (83 worldwide citation)


The improved material deposition process of the present invention utilizes a first, low temperature deposition step followed by a second, high temperature/high power deposition step. In the first deposition step a collimation plate is placed between the sputtering target and the substrate, such that ...



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