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Katsuyuki Musaka
Natsuki Makino, Junji Kunisawa, Keisuke Namiki, Yukio Fukunaga, Katsuyuki Musaka, Ray Fang, Emanuel Israel Cooper, John Michael Cotte, Hariklia Deligianni, Keith T Kwietniak, Brett C Baker O Neal, Matteo Flotta, Philippe Mark Vereecken: Electrolytic processing apparatus and method. Squire Sanders & Dempsey, February 15, 2007: US20070034526-A1


An electrolytic processing apparatus can planarize uniformly over an entire surface of a substrate under a low pressure without any damages to the substrate. The electrolytic processing apparatus has a substrate holder configured to hold and rotate a substrate having a metal film formed on a surface ...


2
Brett C Baker O Neal, Cyril Cabral Jr, Qiang Huang, Kenneth P Rodbell: Microstructure modification in copper interconnect structure. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Louis J Percello Esq, November 30, 2010: US07843063 (11 worldwide citation)


Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in ...


3
Brett C Baker O Neal, Cyril Cabral Jr, Qiang Huang, Kenneth P Rodbell: Microstructure modification in copper interconnect structure. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Louise J Percello Esq, August 30, 2011: US08008199 (1 worldwide citation)


Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in ...


4
Mizuki Nagai, Hiroyuki Kanda, Keiichi Kurashina, Satoru Yamamoto, Hidenao Suzuki, Koji Mishima, Brett C Baker O Neal, Hariklia Deligianni, Keith Kwietniak: Plating method and plating apparatus. Ebara Corporation, Wenderoth Lind & Ponack L, January 20, 2009: US07479213 (1 worldwide citation)


A plating method is capable of preferentially precipitating a plated film fully and uniformly in trenches and via holes according to a mechanical and electrochemical process, and of easily forming a plated film having higher flatness surface without being affected by variations in the shape of trenc ...


5
Brett C Baker O Neal, Qiang Huang: Photovoltaic cells with copper grid. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Louis J Percello Esq, December 2, 2014: US08901414 (1 worldwide citation)


A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper- ...


6
Brett C Baker O Neal, Eric A Joseph, Hiroyuki Miyazoe: Interconnects based on subtractive etching of silver. International Business Machines Corporation, Nicholas L Cadmus, February 7, 2017: US09564362


A method for forming at least one Ag or Ag based alloy feature in an integrated circuit, including providing a blanket layer of Ag or Ag based alloy in a multi-layer structure on a substrate. The method further includes providing a hard mask layer over the blanket layer of Ag or Ag based alloy. The ...


7
Natsuki Makino, Keisuke Namiki, Kunihito Ide, Junji Kunisawa, Katsuyuki Musaka, Philippe Vereecken, Brett C Baker O Neal, Hariklia Deligianni, Keith Kwietniak: Plating method. Wenderoth Lind & Ponack, April 16, 2009: US20090095634-A1


A plating method can form a plated film having a uniform thickness over the entire surface, including the peripheral surface, of a substrate. The plating method includes: disposing an anode so as to face a conductive film, formed on a substrate, which serves as a cathode, and disposing an auxiliary ...


8
Brett C Baker O Neal, Cyril Cabral JR, Qiang Huang, Kenneth P Rodbell: Microstructure modification in copper interconnect structure. International Business Machines Corporation, Scully Scott Murphy & Presser PC, December 23, 2010: US20100323517-A1


Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in ...


9
Brett C Baker O Neal, Cyril Cabral Jr, Qiang Huang, Kenneth P Rodbell: Microstructure modification in copper interconnect structure. International Business Machines Corporation, Scully Scott Murphy & Presser PC, August 20, 2009: US20090206484-A1


Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in ...



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