1
Robin Cheung, Daniel A Carl, Yezdi Dordi, Peter Hey, Ratson Morad, Liang Yuh Chen, Paul F Smith, Ashok K Sinha: In-situ electroless copper seed layer enhancement in an electroplating system. Applied Materials, Thomason Moser & Patterson L, July 10, 2001: US06258223 (164 worldwide citation)


The present invention discloses a system that provides for electroless deposition performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition proce ...


2
Ravi Jallepally, Shih Hung Li, Alain Duboust, Jun Zhao, Liang Yuh Chen, Daniel A Carl: Apparatus and method for fast-cycle atomic layer deposition. Applied Materials, Moser Patterson & Sheridan, August 10, 2004: US06773507 (92 worldwide citation)


Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further ...


3
Liang Yuh Chen, Wei Yung Hsu, Alain Duboust, Ratson Morad, Daniel A Carl: Planarization of substrates using electrochemical mechanical polishing. Applied Materials, Moser Patterson & Sheridan, November 2, 2004: US06811680 (43 worldwide citation)


A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substra ...


4
Daniel A Carl, Barry Chin, Liang Chen, Robin Cheung, Peijun Ding, Yezdi Dordi, Imran Hashim, Peter Hey, Ashok K Sinha: Method for achieving copper fill of high aspect ratio interconnect features. Applied Materials, Moser Patterson & Sheridan, August 20, 2002: US06436267 (43 worldwide citation)


One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising re ...


5
Michael Armacost, A Richard Baker Jr, Wayne S Berry, Daniel A Carl, Donald M Kenney, Thomas J Licata: Micro mask comprising agglomerated material. International Business Machines Corporation, Heslin & Rothenberg, November 14, 1995: US05466626 (26 worldwide citation)


The subject invention provides a method of forming recesses in a substrate such as a capacitor so as to increase the surface area thereof and therefore the charge storage capacity of the capacitor. This is accomplished by utilizing a micro mask formed by agglomeration on the surface of the substrate ...


6
Wei Yung Hsu, Liang Yuh Chen, Ratson Morad, Daniel A Carl: Method for dishing reduction and feature passivation in polishing processes. Applied Materials, Moser Patterson & Sheridan, April 26, 2005: US06884724 (25 worldwide citation)


Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an ...


7
Liang Yuh Chen, Yuchun Wang, Yan Wang, Alain Duboust, Daniel A Carl, Ralph Wadensweiler, Manoocher Birang, Paul D Butterfield, Rashid Mavliev, Stan D Tsai: Conductive polishing article for electrochemical mechanical polishing. Applied Materials, Patterson & Sheridan, January 24, 2006: US06988942 (23 worldwide citation)


An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a ...


8
Liang Yuh Chen, Yuchun Wang, Yan Wang, Alain Duboust, Daniel A Carl, Ralph Wadensweiler, Manoocher Birang, Paul D Butterfield, Rashid Mavliev, Stan D Tsai: Conductive polishing article for electrochemical mechanical polishing. Applied Materials, Patterson & Sheridan, June 27, 2006: US07066800 (20 worldwide citation)


An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a ...


9
Stan D Tsai, Liang Yuh Chen, Lizhong Sun, Shijian Li, Feng Q Liu, Rashid Mavliev, Ratson Morad, Daniel A Carl: Method for chemical mechanical polishing of semiconductor substrates. Applied Materials, Moser Patterson & Sheridan, November 23, 2004: US06821881 (9 worldwide citation)


Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant mater ...


10
Wei Yung Hsu, Gopalakrishna B Prabhu, Lizhong Sun, Daniel A Carl: Methods and compositions for chemical mechanical polishing. Applied Materials, Moser Patterson & Sheridan, January 13, 2004: US06677239 (7 worldwide citation)


Methods and apparatus are provided for planarizing substrate surfaces with selective removal rates and low dishing. One aspect of the method provides for processing a substrate including providing a substrate to a polishing platen having polishing media disposed thereon, providing an abrasive free p ...



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