1
Ana Londergan
Ana R Londergan, Bangalore R Natarajan, Evgeni Gousev, James Randolph Webster, David Heald: MEMS cavity-coating layers and methods. Qualcomm Mems Technologies, Knobbe Martens Olson & Bear, June 8, 2010: US07733552 (11 worldwide citation)


Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the lay ...


2
Ana Londergan
Ana R Londergan, Bangalore R Natarajan, Evgeni Gousev, James Randolph Webster, David Heald: MEMS cavity-coating layers and methods. Qualcomm Mems Technologies, Knobbe Martens Olson & Bear, April 24, 2012: US08164815 (4 worldwide citation)


Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the lay ...


3
Ana Londergan
Khurshid Syed Alam, Evgeni Gousev, Marc Maurice Mignard, David Heald, Ana R Londergan, Philip Don Floyd: Equipment and methods for etching of MEMS. QUALCOMM MEMS Technologies, Knobbe Martens Olson & Bear, September 17, 2013: US08536059 (1 worldwide citation)


Etching equipment and methods are disclosed herein for more efficient etching of sacrificial material from between permanent MEMS structures. An etching head includes an elongate etchant inlet structure, which may be slot-shaped or an elongate distribution of inlet holes. A substrate is supported in ...


4
Ana Londergan
Ana R Londergan, Bangalore R Natarajan, Evgeni Gousev, James Randolph Webster, David Heald: Mems cavity-coating layers and methods. Qualcomm Mems Technologies, August 16, 2012: US20120206462-A1


Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the lay ...


5
Ana Londergan
Ana R Londergan, Bangalore R Natarajan, Evgeni Gousev, James Randolph Webster, David Heald: Mems cavity-coating layers and methods. Qualcomm Mems Technologies, Knobbe Martens Olson & Bear, September 30, 2010: US20100245979-A1


Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the lay ...


6
Ana Londergan
Khurshid Syed Alam, Evgeni Gousev, Marc Maurice Mignard, David Heald, Ana R Londergan, Philip Don Floyd: Equipment and methods for etching of mems. Qualcomm Mems Technologies, Knobbe Martens Olson & Bear, September 2, 2010: US20100219155-A1


Etching equipment and methods are disclosed herein for more efficient etching of sacrificial material from between permanent MEMS structures. An etching head includes an elongate etchant inlet structure, which may be slot-shaped or an elongate distribution of inlet holes. A substrate is supported in ...


7
Ana Londergan
Ana R Londergan, Bangalore R Natarajan, Evgeni Gousev, James Randolph Webster, David Heald: Mems cavity-coating layers and methods. QUALCOMM Incorporated, Knobbe Martens Olson & Bear, September 25, 2008: US20080231931-A1


Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the lay ...


8
David Heald: Process and structure for fabrication of MEMS device having isolated edge posts. QUALCOMM Incorporated, Knobbe Marten Olson & Bear, January 22, 2008: US07321457 (86 worldwide citation)


A method of fabricating an array of MEMS devices includes the formation of support structures located at the edge of upper strip electrodes. A support structure is etched to form a pair of individual support structures located at the edges of a pair of adjacent electrodes. The electrodes themselves ...


9
David Stumbo, Jian Chen, David Heald, Yaoling Pan: Nanowire varactor diode and methods of making same. Nanosys, Sterne Kessler Goldstein & Fox PLLC, October 3, 2006: US07115971 (58 worldwide citation)


A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at lea ...


10
David Heald: Process and structure for fabrication of MEMS device having isolated edge posts. QUALCOMM MEMS Technologies, Knobbe Martens Olson & Bear, July 14, 2009: US07561321 (38 worldwide citation)


A method of fabricating an array of MEMS devices includes the formation of support structures located at the edge of upper strip electrodes. A support structure is etched to form a pair of individual support structures located at the edges of a pair of adjacent electrodes. The electrodes themselves ...



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