1
Grant M Kloster, Michael D Goodner, Shriram Ramanathan, Patrick Morrow: Stacked device underfill and a method of fabrication. Intel Corporation, Blakely Sokoloff Taylor & Zafman, September 20, 2005: US06946384 (144 worldwide citation)


Numerous embodiments of a stacked device underfill and a method of formation are disclosed. In one embodiment, a method of forming stacked semiconductor device with an underfill comprises forming one or more layers of compliant material on at least a portion of the top surface of a substrate, said s ...


2
David Staines, Grant M Kloster, Shriram Ramanathan: Method to fill the gap between coupled wafers. Intel Corporation, Blakely Sokoloff Taylor & Zafman, August 8, 2006: US07087538 (142 worldwide citation)


A three-dimensional integrated circuit formed by applying a material to fill a gap between coupled wafers and slicing the coupled wafers into dice. A method for filling a gap between coupled wafers. Various embodiments include at least one of spinning a coupled wafer pair, drilling a hole into one o ...


3
Grant M Kloster, David Staintes, Shriram Ramanathan: Method of forming a stacked device filler. Intel Corporation, Blakely Sokoloff Taylor & Zafman, January 22, 2008: US07320928 (140 worldwide citation)


Numerous embodiments of a stacked device filler and a method of formation are disclosed. In one embodiment, a method of forming a stacked device filler comprises forming a material layer between two or more substrates of a stacked device, and causing a reaction in at least a portion of the material, ...


4
Jihperng Leu, Chih I Wu, Ying Zhou, Grant M Kloster: Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics. Intel Corporation, Blakely Sokoloff Taylor & Zafman, August 12, 2003: US06605549 (97 worldwide citation)


A method to improve nucleation and/or adhesion of a CVD or ALD-deposited film/layer onto a low-dielectric constant (low-k) dielectric layer, such as a polymeric dielectric or a carbon-doped oxide. In an embodiment, the method includes providing a substrate into a deposition chamber. A dielectric lay ...


5
Hyun Mog Park, Grant M Kloster: Air gap interconnect method. Intel Corporation, Blakely Sokoloff Taylor & Zafman, March 1, 2005: US06861332 (87 worldwide citation)


A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a layer defining an exhaust vent. At an appropriate time, the underlying sacrificial material is decomposed and exhausted away through the exhaust vent. Residue from the exhausted sacrificial material a ...


6
Grant M Kloster, Kevin P O brien, Michael D Goodner, Jihperng Leu, David H Gracias, Lee D Rockford, Peter K Moon, Chris E Barns: Method of forming a selectively converted inter-layer dielectric using a porogen material. Intel Corporation, Michael D Plimier, March 28, 2006: US07018918 (50 worldwide citation)


An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous m ...


7
Grant M Kloster, Kevin P O&apos Brien, Justin K Brask, Michael D Goodner, Donald Bruner: Forming a porous dielectric layer. Intel Corporation, Trop Pruner & Hu P C, May 18, 2004: US06737365 (31 worldwide citation)


A dielectric layer is made porous by treating the dielectric material after metal interconnects are formed in or through that layer. The porosity lowers the dielectric constant of the dielectric material. The dielectric material may be subjected to an electron beam or a sonication bath to create the ...


8
Jihperng Leu, Grant M Kloster, David H Gracias, Lee D Rockford, Peter K Moon, Chris E Barns: Selectively converted inter-layer dielectric. Intel Corporation, Blakely Sokoloff Taylor & Zafman, September 13, 2005: US06943121 (30 worldwide citation)


An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous m ...


9
Grant M Kloster, Kevin P O Brien, David H Gracias, Hyun Mog Park, Vijayakumar S Ramachandrarao: Forming thin hard mask over air gap or porous dielectric. Intel Corporation, Trop Pruner & Hu P C, July 3, 2007: US07238604 (20 worldwide citation)


A thin hard mask is formed over a semiconductor substrate. The thin hard mask allows diffusion of a sacrificial material or pore-forming agent therethrough to form an underlying air gap or porous dielectric region. The thin hard mask may be a polymer or an initially porous material that may be later ...


10
Michael D Goodner, Kevin P O Brien, Grant M Kloster: Formation of air gaps in an interconnect structure using a thin permeable hard mask and resulting structures. Intel Corporation, November 13, 2007: US07294568 (13 worldwide citation)


A method of forming air gaps in the interconnect structure of an integrated circuit device. The air gaps may be formed by depositing sacrificial layer over a dielectric layer and then depositing a permeable hard mask over the sacrificial layer. The sacrificial layer is subsequently removed to form a ...



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