1
Katsuyuki Musaka
Natsuki Makino, Junji Kunisawa, Keisuke Namiki, Yukio Fukunaga, Katsuyuki Musaka, Ray Fang, Emanuel Israel Cooper, John Michael Cotte, Hariklia Deligianni, Keith T Kwietniak, Brett C Baker O Neal, Matteo Flotta, Philippe Mark Vereecken: Electrolytic processing apparatus and method. Squire Sanders & Dempsey, February 15, 2007: US20070034526-A1


An electrolytic processing apparatus can planarize uniformly over an entire surface of a substrate under a low pressure without any damages to the substrate. The electrolytic processing apparatus has a substrate holder configured to hold and rotate a substrate having a metal film formed on a surface ...


2
John Michael Cotte, Christopher Vincent Jahnes, Kenneth John McCullough, Wayne Martin Moreau, Satyanarayana Venkata Nitta, Katherine Lynn Saenger, John Patrick Simons: Method for selective extraction of sacrificial place-holding material used in fabrication of air gap-containing interconnect structures. International Business Machines Corporation, Robert M Trepp Esq, Scully Scott Murphy & Presser, February 12, 2002: US06346484 (32 worldwide citation)


The present invention relates to formation of air gaps in metal/insulator interconnect structures, and to the use of supercritical fluid (SCF)-based methods to extract sacrificial place-holding materials to form air gaps in a structure. Supercritical fluids have gas-like diffusivities and viscositie ...


3
John Michael Cotte, Donald J Delehanty, Kenneth John McCullough, Wayne Martin Moreau, John P Simons, Charles J Taft, Richard P Volant: Process for removing chemical mechanical polishing residual slurry. International Business Machines Corporation, Daniel P Morris, Scully Scott Murphy & Presser, July 30, 2002: US06425956 (24 worldwide citation)


A process of removing residual slurry resulting from chemical mechanical polishing of a workpiece in which the workpiece is contacted with a composition of a supercritical fluid, said supercritical fluid including supercritical, carbon dioxide and a co-solvent, and a surfactant.


4
John Michael Cotte, Madhav Datta, Thomas Edward Dinan, Ravindra Vaman Shenoy: Selective chemical etching in microelectronics fabrication. International Business Machines Corporation, Stephen S Strunck, September 1, 1998: US05800726 (15 worldwide citation)


The present invention relates to a chemical etchant for etching metals in the presence of one or more metals not to be etched, the etchant comprising 10-25 gms EDTA, 15-35 gms K.sub.2 HPO.sub.4 and 25-45 gms oxalic acid in a liter of 30% H.sub.2 O.sub.2. More particularly, in the fabrication of inte ...


5
John Michael Cotte, Brian Paul Gaucher, Janusz Grzyb, Nils Deneke Hoivik, Christopher Vincent Jahnes, John Ulrich Knickerbocker, Duixian Liu, John Harold Magerlein, Chirag Suryakant Patel, Ullrich R Pfeiffer, Cornelia Kang I Tsang: Versatile Si-based packaging with integrated passive components for mmWave applications. International Business Machines Corporation, McGinn IP Law Group PLLC, Louis J Percello Esq, October 5, 2010: US07808798 (15 worldwide citation)


An apparatus is described incorporating an interposer having a cavity for a portion of an antenna structure, having conductor through vias, a top Si part having interconnection wiring and having pads for electrically mounting an integrated circuit chip thereon, wherein the top Si part mates with the ...


6
Veeraraghaven S Basker, John Michael Cotte, Hariklia Deligianni, John Ulrich Knickerbocker, Keith T Kwietniak: Methods for fabricating silicon carriers with conductive through-vias with low stress and low defect density. International Business Machines Corporation, January 4, 2011: US07863189 (14 worldwide citation)


Methods are provided for fabricating silicon carriers with conductive through-vias that allow high-yield manufacture of silicon carrier with low defect density. In particular, methods are provided which enable fabrication of silicon carries with via diameters such as 1 to 10 microns in diameter for ...


7
John Michael Cotte, Kenneth John McCullough, Wayne Martin Moreau, John P Simons, Charles J Taft: Process for depositing a film on a nanometer structure. International Business Machines Corporation, Daniel P Morris, Scully Scott Murphy & Presser, September 17, 2002: US06451375 (13 worldwide citation)


A process of depositing a thin film on a nanometer structure in which a coating, which may be an aerogel material or metallic seed layer, is prepared. The coating is combined with a supercritical composition to form a supercritical coating composition. The supercritical coating composition is deposi ...


8
John Michael Cotte, Kenneth John McCullough, Wayne Martin Moreau, John P Simons, Charles J Taft, Richard P Volant: Check valve for micro electro mechanical structure devices. International Business Machines Corporation, Daniel P Morris, Scully Scott Murphy & Presser, December 28, 2004: US06834671 (12 worldwide citation)


A check valve for micro electro mechanical structure devices (MEMS), and in particular pertains to a check valve which is adapted to be employed in connection with micro electro mechanical structure devices which are intended to be employed with supercritical fluids constituting working fluids. In a ...


9
John Michael Cotte, Dario L Goldfarb, Kenneth John McCullough, Wayne Martin Moreau, Keith R Pope, John P Simons, Charles J Taft: Process of drying semiconductor wafers using liquid or supercritical carbon dioxide. International Business Machines Corporation, Daniel P Morris, Scully Scott Murphy & Presser, June 4, 2002: US06398875 (11 worldwide citation)


A process of drying a semiconductor wafer which includes at least one microelectric structure disposed thereon which includes contacting a water-containing thin film-covered semiconductor wafer with a composition which includes liquid or supercritical carbon dioxide and a surfactant.


10
Lisa A Fanti, John Michael Cotte, David Ely Eichstadt: Electrochemical etch for high tin solder bumps. International Business Machines Corporation, Ira D Blecker, October 22, 2002: US06468413 (10 worldwide citation)


An aqueous electrochemical etchant for etching metals in the presence of one or more metals not to be etched, the etchant including glycerol in the concentration range of 1.30 to 1.70 M, a sulfate compound having a sulfate ion concentration in the range of 0 to 0.5 M, and a phosphate compound having ...



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