1
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method for depositing an amorphous carbon layer. Applied Materials, Moser Patterson and Sheridan, June 3, 2003: US06573030 (445 worldwide citation)


A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


2
Jun Zhao, Tom Cho, Charles Dornfest, Stefan Wolff, Kevin Fairbairn, Xin S Guo, Alex Schreiber, John M White: CVD Processing chamber. Applied Materials, Janis Biksa, September 24, 1996: US05558717 (313 worldwide citation)


A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to ...


3
Dan Maydan, Sasson Somekh, Ashok Sinha, Kevin Fairbairn, Christopher Lane, Kelly Colborne, Hari K Ponnekanti, W N: Ultra high throughput wafer vacuum processing system. Applied Materials, Patterson & Streets L, January 5, 1999: US05855681 (271 worldwide citation)


The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprin ...


4
Kevin Fairbairn, Romuald Nowak: High density plasma CVD and etching reactor. Applied Materials, Michaelson & Wallace, March 25, 1997: US05614055 (198 worldwide citation)


In one aspect, the invention is embodied in an RF inductively coupled plasma reactor including a vacuum chamber for processing a wafer, one or more gas sources for introducing into the chamber reactant gases, and an antenna capable of radiating RF energy into the chamber to generate a plasma therein ...


5
Kevin Fairbairn, Hari K Ponnekanti, David Cheung, Tsutomu Tanaka, Malcal Kelka: Remote plasma source. Applied Materials, Patterson & Associates, December 1, 1998: US05844195 (168 worldwide citation)


The present invention provides a remote plasma source mountable on a process chamber and connectable on one end to a gas inletting system and on the other end to a gas distribution system disposed in a process chamber. Preferably, a conventional microwave generator is utilized to deliver microwaves ...


6
Kevin Fairbairn, Ashok Sinha: Multideck wafer processing system. Applied Materials, Townsend Townsend & Crew, January 23, 2001: US06176667 (96 worldwide citation)


A multideck wafer processing system is described for the treatment of semiconductor wafers. The system includes at least two process chambers stacked one above the other to provide for higher wafer throughput per unit area of cleanroom space. The stacked process chambers enable sharing of pressuriza ...


7
Romuald Nowak, Kevin Fairbairn, Fred C Redeker: High density plasma CVD reactor with combined inductive and capacitive coupling. Applied Materials, Michaelson & Wallace, February 2, 1999: US05865896 (94 worldwide citation)


The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion ...


8
Kevin Fairbairn, Jessica Barzilai, Hari K Ponnekanti, W N: Tandem process chamber. Applied Materials, Moser Patterson & Sheridan, October 21, 2003: US06635115 (60 worldwide citation)


The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power suppl ...


9
Jun Zhao, Tom Cho, Charles Dornfest, Stefan Wolff, Kevin Fairbairn, Xin Sheng Guo, Alex Schreiber, John M White: CVD processing chamber. Applied Materials, Peters Verney Jones & Biksa, December 29, 1998: US05853607 (56 worldwide citation)


A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to ...


10
Sasson Somekh, Kevin Fairbairn, Gary M Kolstoe, Gregory W White, W George Faraco Jr: Wafer tray and ceramic blade for semiconductor processing apparatus. Applied Materials, John P Taylor, September 17, 1996: US05556147 (53 worldwide citation)


A semiconductor wafer processing system for processing wafers from a wafer storage cassette includes a wafer transfer chamber; a wafer storage elevator within the transfer chamber; one or more wafer processing chambers; and a wafer transfer apparatus for transferring a wafer between a standard stora ...



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