1
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek: Thermally floating pedestal collar in a chemical vapor deposition chamber. Applied Materials, Charles S Guenzer, Michael B Einschlag, December 8, 1998: US05846332 (165 worldwide citation)


A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal sup ...


2
Jun Zhao, Lee Luo, Xiao Liang Jin: Method for substrate processing with improved throughput and yield. Applied Materials, Townsend & Townsend, November 30, 1999: US05993916 (126 worldwide citation)


The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage ...


3
Jun Zhao, Lee Luo, Xiao Liang Jin, Jia Xiang Wang, Stefan Wolff, Talex Sajoto: High temperature, high deposition rate process and apparatus for depositing titanium layers. Applied Materials, Townsend and Townsend & Crew, April 18, 2000: US06051286 (75 worldwide citation)


The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for b ...


4
Shulin Wang, Ulrich Kroemer, Lee Luo, Aihua Chen, Ming Li: Cyclical deposition of tungsten nitride for metal oxide gate electrode. Applied Materials, Moser Patterson & Sheridan, December 21, 2004: US06833161 (69 worldwide citation)


A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be dep ...


5
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek: Apparatus for substrate processing with improved throughput and yield. Applied Materials, Townsend and Townsend and Crew, October 10, 2000: US06129044 (61 worldwide citation)


The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage ...


6
Jun Zhao, Lee Luo, Jia Xiang Wang, Xiao Liang Jin, Stefan Wolff, Talex Sajoto, Mei Chang, Paul Frederick Smith: Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment. Applied Materials, Townsend & Townsend and Crew, November 16, 1999: US05983906 (57 worldwide citation)


The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for b ...


7
Jun Zhao, Lee Luo, Xiao Liang Jin, Jia Xiang Wang, Talex Sajoto, Stefan Wolff, Leonid Selyutin, Ashok Sinha: High temperature, high flow rate chemical vapor deposition apparatus and related methods. Applied Materials, Townsend and Townsend and Crew, February 20, 2001: US06189482 (45 worldwide citation)


The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for ...


8
Jun Zhao, Lee Luo, Xiaoliang Jin, Frank Chang, Charles Dornfest, Po Tang: Chemical vapor deposition vaporizer. Applied Materials, Thomason Moser & Patterso, April 3, 2001: US06210485 (40 worldwide citation)


The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the vaporization of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, for ...


9
Jun Zhao, Charles Dornfest, Talex Sajoto, Leonid Selyutin, Stefan Wolff, Lee Luo, Harold Mortensen, Richard Palicka: High temperature ceramic heater assembly with RF capability and related methods. Applied Materials, Townsend and Townsend, October 19, 1999: US05968379 (32 worldwide citation)


The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for b ...


10
Janardhanan Anand Subramony, Yoshitaka Yokota, Ramaseshan Suryanarayanan Iyer, Lee Luo, Aihua Chen: Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD. Applied Materials, Blakely Sokoloff Taylor & Zafman, March 30, 2004: US06713127 (32 worldwide citation)


An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in ...



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