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Robin Cheung, Daniel A Carl, Yezdi Dordi, Peter Hey, Ratson Morad, Liang Yuh Chen, Paul F Smith, Ashok K Sinha: In-situ electroless copper seed layer enhancement in an electroplating system. Applied Materials, Thomason Moser & Patterson L, July 10, 2001: US06258223 (167 worldwide citation)


The present invention discloses a system that provides for electroless deposition performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition proce ...


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Ravi Jallepally, Shih Hung Li, Alain Duboust, Jun Zhao, Liang Yuh Chen, Daniel A Carl: Apparatus and method for fast-cycle atomic layer deposition. Applied Materials, Moser Patterson & Sheridan, August 10, 2004: US06773507 (92 worldwide citation)


Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further ...


4
Suchitra Subrahmanyan, Liang Yuh Chen, Roderick Craig Mosely: Reactive preclean prior to metallization for sub-quarter micron application. Applied Materials, Thomason Moser & Patterson, August 22, 2000: US06107192 (83 worldwide citation)


The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF.sub.4 /O.sub.2, or a mixture of He/NF.sub.3, w ...


5
Noel C MacDonald, Liang Yuh Chen, Zuoying L Zhang: Microdynamic release structure. Cornell Research Foundation, Jones Tullar & Cooper, December 10, 1991: US05072288 (74 worldwide citation)


A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional tungsten cantilever beams on a substrate. Two beams form micromechanical tweezers that move in three dimensions by the application of potential differences between the beams, and between the beams and ...


6
Liang Yuh Chen, Rong Tao, Ted Guo, Roderick Craig Mosely: Dual damascene metallization. Applied Materials, Thomason Moser & Patterson, November 23, 1999: US05989623 (74 worldwide citation)


The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates a barrier layer deposited on all exposed surface of a dielectric layer which contain ...


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Liang Yuh Chen, Roderick Craig Mosely, Fusen Chen, Rong Tao, Ted Guo: Low temperature integrated via and trench fill process and apparatus. Applied Materials, Thomason Moser & Patterson, October 31, 2000: US06139697 (58 worldwide citation)


The present invention relates generally to an improved process for providing complete via fill on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a subst ...


8
Antoine P Manens, Liang Yuh Chen: Process control in electrochemically assisted planarization. Applied Materials, Moser Patterson & Sheridan, February 1, 2005: US06848970 (56 worldwide citation)


Aspects of the invention generally provide a method for polishing a material layer using electrochemical deposition techniques, electrochemical dissolution techniques, polishing techniques, and/or combinations thereof. In one aspect of the invention, the polishing method comprises applying a separat ...


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Alain Duboust, Shou Sung Chang, Liang Yuh Chen, Yan Wang, Siew Neo, Lizhong Sun, Feng Q Liu: Method and apparatus for face-up substrate polishing. Applied Materials, Moser Patterson & Sheridan, August 17, 2004: US06776693 (51 worldwide citation)


A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a basin and a polishing head. A carrier is disposed in the basin and has a substrate supporting surface. A retaining ring is disposed on the carrier and at least part ...


10
Liang Yuh Chen, Rong Tao, Ted Guo, Roderick Craig Mosely: Dual damascene metallization. Applied Materials, Thomason Moser & Patterson, March 27, 2001: US06207222 (45 worldwide citation)


The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates a barrier layer deposited on all exposed surface of a dielectric layer which contain ...



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