1
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Arizona Board of Regents, Snell & Wilmer, June 2, 1998: US05761115 (353 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


2
Michael N Kozicki: Programmable microelectronic devices and method of forming and programming same. Arizona Board of Regents, Snell & Wilmer L, November 26, 2002: US06487106 (318 worldwide citation)


A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, an ...


3
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Arizona Board of Regents, Snell & Wilmer, July 4, 2000: US06084796 (264 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


4
Michael N Kozicki, William C West: Programmable sub-surface aggregating metallization structure and method of making same. Arizona Board of Regents, Snell & Wilmer, July 9, 2002: US06418049 (248 worldwide citation)


A programmable sub-surface aggregating metallization sructure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with ...


5
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Arizona Board of Regents, Snell & Wilmer, June 22, 1999: US05914893 (237 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


6
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Snell & Wilmer L, April 20, 1999: US05896312 (226 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


7
Michael N Kozicki: Personal electronic dosimeter. Arizona Board of Regents, David G Rosenbaum, March 19, 1996: US05500532 (222 worldwide citation)


A personal electronic ultraviolet dosimeter for measuring exposure to short wavelength electromagnetic radiation. The dosimeter is for personal use to determine cumulative exposure to radiation. Exposure dosage is determined through the photodissolution of a metal-containing film into a chalcogenide ...


8
Michael N Kozicki, Shao Wen Hsia: High resolution, multi-layer resist for microlithography and method therefor. Arizona Board of Regents, David G Rosenbaum, May 24, 1994: US05314772 (222 worldwide citation)


A high resolution, multi-layer resist for use in microlithography and a method is disclosed. The resist consists of a planarized layer deposited onto a substrate and an active layer, consisting of arsenic sulfide and silver is deposited onto the planarized layer. Irradiation with light, or other sou ...


9
Michael N Kozicki: Programmable interconnection system for electrical circuits. Arizona Board of Regents, Snell & Wilmer, October 22, 2002: US06469364 (187 worldwide citation)


A programmable interconnection system and methods of forming interconnections in the system are disclosed. The system generally includes a metal doped chalcogenide pathway. A metal feature is created within the system by applying a voltage bias across the chalcogenide pathway.


10
Michael N Kozicki: Self-repairing interconnections for electrical circuits. Arizona Board of Regents, Snell & Wilmer, May 14, 2002: US06388324 (184 worldwide citation)


A self-repairing interconnection system and methods for forming the system are disclosed. The system includes a metal pathway adjacent a metal-doped chalcogenide material. The system is configured to repair defects in the metal pathway by donating metallic ions from the metal-doped chalcogenide mate ...



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