1
Kenji Ishikawa, Mitsuaki Komino, Tadashi Mitui, Teruo Iwata, Izumi Arai, Yoshifumi Tahara: Stage having electrostatic chuck and plasma processing apparatus using same. Tokyo Electron, Tokyo Electron Yamanashi, Oblon Spivak McClelland Maier & Neustadt, January 17, 1995: US05382311 (268 worldwide citation)


A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting ...


2
Kouichi Kazama, Mitsuaki Komino, Kenji Ishikawa, Yoichi Ueda: Method of controlling temperature of susceptor. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt P C, October 22, 1996: US05567267 (116 worldwide citation)


A susceptor of a plasma etching apparatus is arranged on a heater fixing frame incorporating a heater. The fixing frame is arranged on a cooling block containing liquid nitrogen. A boundary clearance is formed between the fixed frame and the cooling block and on a heat transfer path. A method of con ...


3
Mitsuaki Komino: Reduced pressure and normal pressure treatment apparatus. Tokyo Electron, Beveridge DeGrandi Weilacher & Young L, June 23, 1998: US05769952 (79 worldwide citation)


A reduced pressure treatment unit comprising a plurality of treatment chambers conducting reduced pressure process treatment of a treatment object (wafer) and a normal pressure treatment unit conducting normal pressure process treatment of the treatment object, which are connected by a load lock cha ...


4
Mitsuaki Komino, Yoichi Ueda, Youichi Deguchi, Satoru Kawakami: Plasma process apparatus. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, December 26, 1995: US05478429 (76 worldwide citation)


The present invention provides a plasma process apparatus wherein RF power is applied to a process gas, thereby to convert the gas into plasma for processing an object, the apparatus having a process chamber, an upper electrode located in the process chamber and having a gas-supplying section for su ...


5
Youichi Deguchi, Satoru Kawakami, Yoichi Ueda, Mitsuaki Komino: Plasma processing apparatus. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt P C, September 9, 1997: US05665166 (73 worldwide citation)


Disclosed is a plasma processing apparatus, comprising a first electrode on which an object to be processed is to be disposed, a second electrode arranged to face the first electrode, a high frequency power supply for supplying a high frequency power between the first and second electrodes, a proces ...


6
Masahide Watanabe, Masami Kubota, Shiro Koyama, Kenji Ishikawa, Kouichi Kazama, Mitsuaki Komino, Takanori Sakurai: Electrostatic chuck. Tokyo Electron, Tokyo Electron Yamanashi, Oblon Spivak McClelland Maier & Neustadt P C, April 29, 1997: US05625526 (72 worldwide citation)


An electrostatic chuck of this invention includes a conductive film, an insulating coat formed on a susceptor to cover the conductive film, and a feeder circuit for applying a voltage to the conductive film to cause the insulating coat to generate an electrostatic attractive force. The feeder circui ...


7
Masayuki Tomoyasu, Akira Koshiishi, Kosuke Imafuku, Shosuke Endo, Kazuhiro Tahara, Yukio Naito, Kazuya Nagaseki, Keizo Hirose, Mitsuaki Komino, Hiroto Takenaka, Hiroshi Nishikawa, Yoshio Sakamoto: Plasma treatment method and apparatus. Tokyo Electron, Edgar H Haug, Grace L Pan, Frommer Lawrence & Haug, July 24, 2001: US06264788 (58 worldwide citation)


A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f


8
Yoichi Ueda, Mitsuaki Komino, Koichi Kazama: Plasma processing apparatus. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, December 27, 1994: US05376213 (58 worldwide citation)


A plasma etching apparatus includes a wafer-mount arranged in an aluminum-made process chamber. The wafer-mount comprises an aluminum-made susceptor, a heater fixing frame and a cooling block, and a ceramics heater is attached to the heater fixing frame. A bore in which liquid nitrogen is contained ...


9
Mitsuaki Komino: Treatment apparatus control method. Tokyo Electron, Graham & James, December 17, 1996: US05584971 (57 worldwide citation)


This invention provides a method of controlling a treatment apparatus including a treatment chamber adjustable to a desired reduced-pressure atmosphere, a mounting table arranged in the treatment chamber to mount an object to be treated, a cooling medium container provided in the mounting table, and ...


10
Mitsuaki Komino, Osamu Uchisawa: Drying processing method and apparatus using same. Tokyo Electron, Motoyama Eng Works, Morrison & Foerster, October 24, 2000: US06134807 (51 worldwide citation)


A drying processing apparatus for supplying a dry gas to a processing chamber 35, which houses therein semiconductor wafers W, to dry the semiconductor wafers W, including a heater 32 for heating N.sub.2 gas serving as a carrier gas; a vapor generator 34 for making IPA misty by using the N.sub.2 gas ...



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