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Ravi Jallepally, Shih Hung Li, Alain Duboust, Jun Zhao, Liang Yuh Chen, Daniel A Carl: Apparatus and method for fast-cycle atomic layer deposition. Applied Materials, Moser Patterson & Sheridan, August 10, 2004: US06773507 (92 worldwide citation)


Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further ...


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David B Noble, Ravi Jallepally, Nathan D&apos Astici, Gary Miner, Turgut Sahin, Guangcai Xing, Yashraj Bhatnagar: Apparatus for exposing a substrate to plasma radicals. Applied Materials, Blakely Sokoloff Taylor & Zafman, September 17, 2002: US06450116 (39 worldwide citation)


An apparatus and method for exposing a substrate to plasma including a first reaction chamber adapted to generate a plasma comprising ions and radicals and a second reaction chamber coupled to the first reaction chamber and adapted to house a substrate at a sight in the second reaction chamber. The ...


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Balasubramanian Ramachandran, Joseph Michael Ranish, Ravi Jallepally, Sundar Ramamurthy, Raman Achutharaman, Brian Haas, Aaron Hunter: Tailored temperature uniformity. Applied Materials, Patterson & Sheridan LL, October 24, 2006: US07127367 (18 worldwide citation)


Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to co ...


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Balasubramanian Ramachandran, Ravi Jallepally, Ryan C Boas, Sundar Ramamurthy, Amir Al Bayati, Houda Graoui, Joseph M Spear: Advances in spike anneal processes for ultra shallow junctions. Applied Materials, Moser Patterson & Sheridan, May 24, 2005: US06897131 (16 worldwide citation)


Lamp based spike annealing was improved to address the aggressive requirements of <100 nm Ultra Shallow Junction (USJ) technologies. Improvements focused on enhancing cool down rates, and thereby improving spike sharpness. Boron ion implanted substrates with varying ion-implanted energy and dose wer ...


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Ravi Jallepally, Duboust Alain, Li Shih Hung, Song Kevin, Majewski Robert B, Chen Liang Yuh, Carl Daniel A: Atomic layer deposition of ta205 and high-k dielectrics. Applied Materials, May 15, 2002: EP1205574-A2 (12 worldwide citation)


Methods of forming compound thin films through atomic layer deposition using high-k dielectric Group VB species are described. A substrate is placed in a reaction chamber. A first reactant gas of a Group VB element is injected into the reaction chamber where it is chemisorbed as an atomic layer on t ...


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Joseph M Ranish, Corina E Tanasa, Sundar Ramamurthy, Claudia Lai, Ravi Jallepally, Ramachandran Balasubramanian, Aaron M Hunter, Agus Tjandra, Norman Tam: Lamp array for thermal processing exhibiting improved radial uniformity. Applied Materials, Law Office of Robert M Wallace, March 24, 2009: US07509035 (9 worldwide citation)


A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center ...


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Ravi Jallepally, Shih Hung Li, Alain Duboust, Jun Zhao, Liang Yuh Chen, Daniel A Carl: Apparatus and method for fast-cycle atomic layer deposition. Applied Materials, Applied Materials, June 12, 2003: US20030106490-A1 (5 worldwide citation)


Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further ...


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Joseph Yudovsky, Brendan McDougall, Ravi Jallepally, Yi Chiau Huang, Maitreyee Mahajani, Kevin Griffin, Andrew C Sherman: Chamber components with increased pyrometry visibility. Applied Materials, Patterson & Sheridan, April 12, 2011: US07921803 (3 worldwide citation)


The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500° C. One embodiment of the ...


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Ravi Jallepally, Duboust Alain, Li Shih Hung, Song Kevin, Majewski Robert B, Chen Liang Yuh, Carl Daniel A: Atomic layer deposition of ta2o5 and high-k dielectric. Applied Materials, June 7, 2002: JP2002-164348 (2 worldwide citation)


PROBLEM TO BE SOLVED: To provide a method of forming compound thin films through atomic layer deposition using high-k dielectric Group VB species.SOLUTION: A substrate is placed in a reaction chamber. A first reactant gas of a Group VB element is injected into the reaction chamber, where it is chemi ...


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