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Ravi Jallepally, Shih Hung Li, Alain Duboust, Jun Zhao, Liang Yuh Chen, Daniel A Carl: Apparatus and method for fast-cycle atomic layer deposition. Applied Materials, Moser Patterson & Sheridan, August 10, 2004: US06773507 (92 worldwide citation)


Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further ...


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Shih Hung Li, Curtis Vass: Wafer out-of-pocket detection method. Applied Materials, Blakely Sokoloff Taylor & Zafman, August 14, 2001: US06274878 (60 worldwide citation)


An apparatus and method for monitoring the inclination of a wafer residing within a pocket of a semiconductor processing chamber susceptor. The apparatus of the present invention includes a laser beam source that is positioned to direct a laser beam onto the top surface of a wafer that has been posi ...


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Xin Sheng Guo, John V Schmitt, Shih Hung Li: Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system. Applied Materials, Thomason Moser & Patterson, June 26, 2001: US06251759 (34 worldwide citation)


An improvement in the deposition of materials in a multiple chamber semiconductor processing cluster tool comprising a first cluster of first chambers, a second cluster of second chambers and a transition chamber located between the first cluster and the second cluster, where the transition chamber ...


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John Vincent Schmitt, Shih Hung Li, Christophe Marcadal, Anzhong Chang, Ling Chen: Methods and apparatus for improved vaporization of deposition material in a substrate processing system. Applied Materials, Konrad Raynes Victor & Mann, July 22, 2003: US06596085 (32 worldwide citation)


A deposition system for performing chemical vapor deposition comprising deposition chamber and a vaporizer coupled to said chamber. In one aspect, the vaporizer has a relatively short mixing passageway to mix a carrier gas with a liquid precursor to produce a fine aerosol-like dispersion of liquid p ...


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Shih Hung Li, Curtis Vass: Wafer out-of-pocket detection tool. Applied Materials, Blakely Sokoloff Taylor & Zafman, August 8, 2000: US06099596 (23 worldwide citation)


An apparatus for monitoring the inclination of a wafer residing within a pocket of a semiconductor processing chamber susceptor. The apparatus of the present invention includes a laser beam source that is positioned to direct a laser beam onto the top surface of a wafer that has been positioned with ...


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Shih Hung Li, Curtis Vass: Wafer out-of-pocket detector and susceptor leveling tool. Applied Materials, Blakely Sokoloff Taylor & Zafman, March 6, 2001: US06197117 (13 worldwide citation)


An apparatus and method for monitoring the level of a semiconductor processing chamber susceptor and the inclination of a wafer residing within a pocket of the susceptor. In one embodiment, a light beam transmitter is positioned to direct a light beam, such as a laser beam, onto the top surface of a ...


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Shih Hung Li, Timothy Green: Semiconductor processing chamber calibration tool. Applied Materials, Blakely Sokoloff Taylor & Zafman, May 16, 2000: US06063196 (10 worldwide citation)


An apparatus and method for aligning various components of a semiconductor processing system is disclosed. A calibration tool positioned on the main body of the processing chamber is used to align the coordinates of the susceptor, wafer lifting pins, susceptor shaft, wafer handling blade and the rot ...


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Ravi Jallepally, Shih Hung Li, Alain Duboust, Jun Zhao, Liang Yuh Chen, Daniel A Carl: Apparatus and method for fast-cycle atomic layer deposition. Applied Materials, Applied Materials, June 12, 2003: US20030106490-A1 (5 worldwide citation)


Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further ...


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Kevin Song, Ravi Jallepally, Shih Hung Li, Liang Yuh Chen: Process conditions and precursors for atomic layer deposition (ald) of al2o3. Applied Materials, Applied Materials, July 24, 2003: US20030139005-A1


A semiconductor processing chamber has been utilized to perform sequential deposition of high-K Al2O3 thin films on a substrate disposed in the chamber employing low viscosity precursors. The method commences with introduction of an aluminum precursor into the processing chamber. In this manner, a m ...



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