1
Gang Liu, Ramesh H Kakkad, Stephen J Fonash: Low temperature crystallization and pattering of amorphous silicon films. The Pennsylvania Research Corporation, Thomas J Monahan, September 15, 1992: US05147826 (357 worldwide citation)


The 700.degree. C./4 min. rapid thermal anneal described in the prior art for converting amorphous Si to polycrystalline Si can be reduced to a temperature range of from 550.degree. C. to 650.degree. C. This is accomplished by depositing a very thin discontinuous film of a nucleating site forming ma ...


2
Stephen J Fonash, Gang Liu: Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates. The Penn State Research Foundation, Thomas J Monahan, January 4, 1994: US05275851 (305 worldwide citation)


A fabrication process polycrystalline silicon thin film transistors commences with the deposition of an ultra-thin nucleating-site forming layer onto the surface of an insulating substrate (e.g., 7059 glass). Next, an amorphous silicon film is deposited thereover and the combined films are annealed ...


3
Ajeet Rohatgi, Prosenjit Rai Choudhury, Joseph R Gigante, Ranbir Singh, Stephen J Fonash: Low temperature process for annealing shallow implanted N+/P junctions. Westinghouse Electric, Joel Petrow, June 11, 1985: US04522657 (99 worldwide citation)


Disclosed is a low temperature technique for annealing implantation damage and activating dopants. Conventional furnace annealing requires temperatures as high as 1000.degree. to 1100.degree. C. to completely anneal the dopant implantation damage; 75 KeV arsenic implantation followed by 550.degree. ...


4
Stephen J Fonash, A Kaan Kalkan: Nanostructure tailoring of material properties using controlled crystallization. The Penn State Research Foundation, Thomas J Monahan, November 30, 1999: US05994164 (81 worldwide citation)


The present invention is generally related to controllably modifying or tailoring the structure of crystalline films to adjust and enhance the material properties of the film, such as optical, mechanical and electrical properties. Crystalline films generally refer to microcrystalline (.mu.c) film, n ...


5
Stephen J Fonash, Ali Kaan Kalkan, Sanghoon Bae: Deposited thin film void-column network materials. The Penn State Research Foundation, Ohlandt Greeley Ruggiero & Perle L, June 4, 2002: US06399177 (66 worldwide citation)


A novel porous film is disclosed comprising a network of silicon columns in a continuous void which may be fabricated using high density plasma deposition at low temperatures, i.e., less than about 250° C. This silicon film is a two-dimensional nano-sized array of rodlike columns. This void-column m ...


6
Stephen J Fonash, Xin Lin, Douglas M Reber: Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications. The Penn State Research Foundation, Ohlandt Greeley Ruggiero & Perle L, March 11, 2003: US06531193 (64 worldwide citation)


Silicon dioxide thin film have been deposited at temperatures from 25° C. to 250° C. by plasma enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon containing precursor. At these temperatures, the PETMS oxide films have been found to exhibit adjustable stress and a ...


7
Ali Kaan Kalkan, Stephen J Fonash: Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films. The Penn State Research Foundation, Perkins Smith & Cohen, Peter J Borghetti, John A Hamilton, July 19, 2005: US06919119 (45 worldwide citation)


An electronic or opto-electronic device or a chemical sensor comprising: an interpenetrating network of a nanostructured high surface area to volume ratio film material and an organic/inorganic material forming a nanocomposite. The high surface area to volume film material is obtained onto an electr ...


8
Stephen J Fonash, Xin Lin, Anand Krishnan, Vyshnavi Suntharalingam: Method and system for the reduction of off-state current in field effect transistors. The Penn State Research Foundation, Thomas J Monahan, August 31, 1999: US05945866 (26 worldwide citation)


A method for reducing the field dependence of an off-state current flow condition in a field-effect transistor having a source electrode, a drain electrode and a gate electrode, includes the steps of: applying a far off-state bias between the drain electrode and the gate electrode to drive a conduct ...


9
Stephen J Fonash, Handong Li, Youngchul Lee, Joseph D Cuiffi, Daniel J Hayes: Use of sacrificial layers in the manufacture of high performance systems on tailored substrates. The Penn State Research Foundation, Nixon Peabody, December 18, 2007: US07309620 (22 worldwide citation)


The invention relates to methods for preparing a removable system on a mother substrate. The method deposits a high surface to volume sacrificial layer on a mother substrate and stabilizes the sacrificial layer by a) removing volatile chemical species in and on the sacrificial layer and/or b) modify ...


10
Stephen J Fonash, Sanghoon Bae, Daniel J Hayes, Joseph Cuiffi: Deposited thin films and their use in detection, attachment and bio-medical applications. The Penn State Research Foundation, Peter J Borghetti, Orlando Lopez, Perkins Smith & Cohen, September 21, 2004: US06794196 (22 worldwide citation)


The present invention is directed to the use of deposited thin films for chemical or biological analysis. The invention further relates to the use of these thin films in separation adherence and detection of chemical of biological samples. Applications of these thin films include desorption-ionizati ...



Click the thumbnails below to visualize the patent trend.