1
Ulrich Klostermann
Daniel Braun, Rainer Leuschner, Ulrich Klostermann: MRAM with magnetic via for storage of information and field sensor. Infineon Technologies, Altis Semiconductor, Dicke Billig & Czaja PLLC, August 15, 2006: US07092284 (45 worldwide citation)


A magnetic memory element is disclosed. The magnetic memory element includes a magnetic via for storing information, made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic via having a magnetic anisotropy wit ...


2
Ulrich Klostermann
Alexander Duch, Ulrich Klostermann, Michael Kund: Electric device protection circuit and method for protecting an electric device. Qimonda, ALTIS Semiconductor SNC, Slater & Matsil L, July 6, 2010: US07751163 (39 worldwide citation)


An electric device protection circuit comprises at least one conductive bridging unit which electrically connects a terminal of the electric device to a protection node set to a protection potential, the protection potential being chosen such that the conductive bridging unit switches from a resisti ...


3
Ulrich Klostermann
Ulrich Klostermann: Integrated circuits; methods for manufacturing an integrated circuit and memory module. Qimonda, Altis Semiconductor SNC, November 23, 2010: US07838861 (33 worldwide citation)


Embodiments of the present invention relate generally to integrated circuits, to methods for manufacturing an integrated circuit and to a memory module. In an embodiment of the invention, an integrated circuit is provided having a programmable arrangement. The programmable arrangement includes a sub ...


4
Ulrich Klostermann
Rainer Leuschner, Ulrich Klostermann: Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module. Qimonda, ALTIS Semiconductor SNC, Slater & Matsil L, April 13, 2010: US07697322 (26 worldwide citation)


Embodiments of the invention relate generally to integrated circuits, to a method for manufacturing an integrated circuit, to a method for decreasing the influence of magnetic fields, and to a memory module. In an embodiment of the invention, an integrated circuit having a magnetic tunnel junction i ...


5
Ulrich Klostermann
Stephen L Brown, Arunava Gupta, Ulrich Klostermann, Stuart Stephen Papworth Parkin, Wolfgang Raberg, Mahesh Samant: Magnetic tunnel junctions for MRAM devices. Infineon Technologies, International Business Machines Corporation, Slater & Matsil L, December 12, 2006: US07149105 (18 worldwide citation)


Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy ...


6
Ulrich Klostermann
Ulrich Klostermann, Rainer Leuschner: Integrated circuit, method of manufacturing an integrated circuit, and memory module. Qimonda, Altis Semiconductor SNC, December 21, 2010: US07855435 (12 worldwide citation)


According to one embodiment of the present invention, an integrated circuit including a plurality of memory cells is provided. Each memory cell includes a resistivity changing memory element which includes a top electrode, a bottom electrode, and resistivity changing material being disposed between ...


7
Ulrich Klostermann
Human Park, Ulrich Klostermann, Rainer Leuschner: Condensed memory cell structure using a FinFET. Qimonda, Altis Semiconductor SNC, John S Economou, March 4, 2014: US08665629 (9 worldwide citation)


An integrated circuit and method for manufacturing an integrated circuit are described. In one embodiment, the integrated circuit includes a memory cell that includes a resistivity changing memory element. The resistivity changing memory element is electrically coupled to a select transistor that in ...


8
Ulrich Klostermann
Juergen Zimmer, Ulrich Klostermann, Christian Alof: Magnetoresistive sensor element for sensing a magnetic field. Infineon Technologies, Eschweiler & Associates, February 24, 2009: US07495434 (9 worldwide citation)


A magnetoresistive sensor element has a first magnetic layer structure, a second magnetic layer structure, and a barrier layer. The resistance R1 of the first magnetic layer structure, the resistance R2 of the second magnetic layer structure and resistance-area product RA define a characteristic len ...


9
Ulrich Klostermann
Ulrich Klostermann, Dietmar Gogl: System and method for controlling constant power dissipation. Infineon Technologies, Altis Semiconductor, Slater & Matsil L, August 12, 2008: US07411854 (9 worldwide citation)


A method for controlling the constant power dissipation of a memory cell includes initially measuring the resistance of the memory cell, and subsequently controlling a source to apply a variable level of current or voltage to the memory cell. The variable level of the applied current or voltage is d ...


10
Ulrich Klostermann
Rainer Leuschner, Daniel Braun, Gill Yong Lee, Ulrich Klostermann: Magnetic memory with static magnetic offset field. Infineon Technologies, Altis Semiconductor, Dicke Billig & Czaja PLLC, July 11, 2006: US07075807 (7 worldwide citation)


A magnetoresistive or magnetic memory element and a magnetic random access memory having one or more magnetic memory elements. The memory element includes a magnetic tunnel junction including first and a second magnetic layers. The first magnetic layer having a free magnetization. The free magnetiza ...



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