1
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Arizona Board of Regents, Snell & Wilmer, June 2, 1998: US05761115 (356 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


2
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Arizona Board of Regents, Snell & Wilmer, July 4, 2000: US06084796 (264 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


3
Michael N Kozicki, William C West: Programmable sub-surface aggregating metallization structure and method of making same. Arizona Board of Regents, Snell & Wilmer, July 9, 2002: US06418049 (250 worldwide citation)


A programmable sub-surface aggregating metallization sructure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with ...


4
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Arizona Board of Regents, Snell & Wilmer, June 22, 1999: US05914893 (239 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


5
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Snell & Wilmer L, April 20, 1999: US05896312 (228 worldwide citation)


A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


6
Jay F Whitacre, Ratnakumar V Bugga, William C West: Structure of thin-film lithium microbatteries. The United States of America represented by the Administrator of the National Aeronautics and Space Administration, John H Kusmiss, May 6, 2003: US06558836 (76 worldwide citation)


A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as th ...


7
Jay F Whitacre, Ratnakumar V Bugga, William C West: Method for manufacturing thin-film lithium microbatteries. The United States of America represented by the Administrator of the National Aeronautics and Space Administration, John H Kusmiss, July 20, 2004: US06764525 (53 worldwide citation)


A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as th ...


8
Michael N Kozicki, William C West: Programmable sub-surface aggregating metallization structure and method of making same. Axon Technologies Corporation, Snell & Wilmer L, September 28, 2004: US06798692 (35 worldwide citation)


A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with ...


9
Michael N Kozicki, William C West: Programmable sub-surface aggregating metallization structure and method of making same. Arizona Board of Regents, Axon Technologies Corporation, Snell & Wilmer L, November 28, 2006: US07142450 (20 worldwide citation)


A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with ...


10
Michael N Kozicki, William C West: Programmable sub-surface aggregating metallization structure and method of making same. Arizona Board Of Regents, Snell & Wilmer, One Arizona Center, December 19, 2002: US20020190350-A1 (16 worldwide citation)


A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor, such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material wit ...



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