1
Jun Zhao, Lee Luo, Xiao Liang Jin: Method for substrate processing with improved throughput and yield. Applied Materials, Townsend & Townsend, November 30, 1999: US05993916 (126 worldwide citation)


The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage ...


2
Jun Zhao, Lee Luo, Xiao Liang Jin, Jia Xiang Wang, Stefan Wolff, Talex Sajoto: High temperature, high deposition rate process and apparatus for depositing titanium layers. Applied Materials, Townsend and Townsend & Crew, April 18, 2000: US06051286 (75 worldwide citation)


The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for b ...


3
Jun Zhao, Lee Luo, Jia Xiang Wang, Xiao Liang Jin, Stefan Wolff, Talex Sajoto, Mei Chang, Paul Frederick Smith: Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment. Applied Materials, Townsend & Townsend and Crew, November 16, 1999: US05983906 (57 worldwide citation)


The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for b ...


4
Jun Zhao, Lee Luo, Xiao Liang Jin, Jia Xiang Wang, Talex Sajoto, Stefan Wolff, Leonid Selyutin, Ashok Sinha: High temperature, high flow rate chemical vapor deposition apparatus and related methods. Applied Materials, Townsend and Townsend and Crew, February 20, 2001: US06189482 (45 worldwide citation)


The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for ...


5
Talex Sajoto, Charles Dornfest, Leonid Selyutin, Jun Zhao, Vincent Ku, Xiao Liang Jin: Temperature controlled gas feedthrough. Applied Materials, Moser Patterson & Sheridan, March 4, 2003: US06527865 (29 worldwide citation)


The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In ...



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