1
Jun Zhao, Tom Cho, Charles Dornfest, Stefan Wolff, Kevin Fairbairn, Xin S Guo, Alex Schreiber, John M White: CVD Processing chamber. Applied Materials, Janis Biksa, September 24, 1996: US05558717 (313 worldwide citation)


A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to ...


2
Xin S Guo: Cleaning of a PVD chamber containing a collimator. Applied Materials, Birgit E Morris, Donald Verplancken, August 27, 1996: US05549802 (33 worldwide citation)


When a collimator is employed between the target and a substrate support in a physical vapor deposition chamber, since the collimator is grounded to the chamber walls, the chamber becomes divided electrically, because the collimator acts as a barrier to the passage of the plasma. Thus a two step pla ...


3
Xin S Guo: Cleaning of a PVD chamber containing a collimator. Applied Materials, Birgit E Morris, Donald Verplancken, May 20, 1997: US05630917 (21 worldwide citation)


When a collimator is employed between the target and a substrate support in a physical vapor deposition chamber, since the collimator is grounded to the chamber walls, the chamber becomes divided electrically, because the collimator acts as a barrier to the passage of the plasma. Thus a two step pla ...


4
Xin S Guo: Apparatus and process for increasing uniformity of sputtering rate in sputtering apparatus. Applied Materials, John P Taylor, July 23, 1996: US05538603 (17 worldwide citation)


An improvement in a sputter deposition apparatus and process for sputtering is described wherein the surface of the sputtering target, adjacent its outer edge, is provided with a taper which reduces the redeposition rate thereon of back scattered atoms previously sputtered from the target surface. W ...



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