1
Jun Zhao, Tom Cho, Charles Dornfest, Stefan Wolff, Kevin Fairbairn, Xin S Guo, Alex Schreiber, John M White: CVD Processing chamber. Applied Materials, Janis Biksa, September 24, 1996: US05558717 (313 worldwide citation)


A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to ...


2
Liang Yuh Chen, Roderick Craig Mosely, Fusen Chen, Rong Tao, Ted Guo: Low temperature integrated via and trench fill process and apparatus. Applied Materials, Thomason Moser & Patterson, October 31, 2000: US06139697 (58 worldwide citation)


The present invention relates generally to an improved process for providing complete via fill on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a subst ...


3
Jun Zhao, Tom Cho, Charles Dornfest, Stefan Wolff, Kevin Fairbairn, Xin Sheng Guo, Alex Schreiber, John M White: CVD processing chamber. Applied Materials, Peters Verney Jones & Biksa, December 29, 1998: US05853607 (56 worldwide citation)


A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to ...


4
Tetsuya Ishikawa, Padmanabhan Krishnaraj, Feng Gao, Alan W Collins, Lily Pang: Gas distribution system for a CVD processing chamber. Applied Materials, Thomason Moser & Patterson, November 7, 2000: US06143078 (49 worldwide citation)


The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first d ...


5
Tetsuya Ishikawa, Padmanabhan Krishnaraj, Feng Gao, Alan W Collins, Lily Pang: Gas distribution system for a CVD processing chamber. Applied Materials, Thomason Moser & Patterson, November 26, 2002: US06486081 (37 worldwide citation)


The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first d ...


6
Ted Guo, Liang Yuh Chen, Mehul Naik, Roderick C Mosely: Single step process for blanket-selective CVD aluminum deposition. Applied Materials, Moser Patterson & Sheridan, October 1, 2002: US06458684 (33 worldwide citation)


The present invention relates generally to an improved apparatus and process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron aperture width applications. In one aspect of the invention, a dielectri ...


7
Ted Guo, Liang Chen, Fusen Chen, Roderick C Mosely: Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer. Applied Materials, Patterson and Associates, May 23, 2000: US06066358 (27 worldwide citation)


The present invention relates generally to an improved apparatus and process for providing uniform step coverage on a substrate and planarization of conducting layers to form continuous, void-free interconnects in sub-half micron, high aspect ratio aperture width applications and highly oriented con ...


8
Zhao Jun, Cho Tom, Dornfest Charles, Wolff Stefan, Fairbairn Kevin, Guo Xin Sheng, Schreiber Alex, White John M: Cvd processing chamber. Applied Materials, June 5, 1996: EP0714998-A2 (25 worldwide citation)


A process chamber 133 is disclosed which provides a 360 DEG circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly 135. The substrate faces a one-piece gas distribution faceplate 122 being conn ...


9
Liang Chen, Ted Guo, Fusen Chen, Roderick C Mosely: Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer. Applied Materials, Thomason Moser & Patterson, September 19, 2000: US06120844 (24 worldwide citation)


The present invention relates generally to an improved apparatus and process to provide a thin self-aligning layer prior to forming a conducting film layer thereover to improve the film characteristics and deposition coverage. In one aspect of the invention, a dielectric layer is formed over a condu ...


10
Roderick Craig Mosely, Hong Zhang, Fusen Chen, Ted Guo: Low temperature integrated metallization process and apparatus. Applied Materials, Applied Materials, March 2, 1999: US05877087 (18 worldwide citation)


The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a s ...



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