1
Grant M Kloster, David Staintes, Shriram Ramanathan: Method of forming a stacked device filler. Intel Corporation, Blakely Sokoloff Taylor & Zafman, January 22, 2008: US07320928 (140 worldwide citation)


Numerous embodiments of a stacked device filler and a method of formation are disclosed. In one embodiment, a method of forming a stacked device filler comprises forming a material layer between two or more substrates of a stacked device, and causing a reaction in at least a portion of the material, ...


2
Grant M Kloster, David Staintes, Shriram Ramanathan: Method of forming a stacked device filler. Intel Corporation, Blakely Sokoloff Taylor and Zafman, January 10, 2006: US06984873 (4 worldwide citation)


Numerous embodiments of a stacked device filler and a method of formation are disclosed. In one embodiment, a method of forming a stacked device filler comprises forming a material layer between two or more substrates of a stacked device, and causing a reaction in at least a portion of the material, ...


3
Grant M Kloster, David Staintes, Shriram Ramanathan: Method of forming a stacked device filler. Michael A Bernadicou, Blakely Sokoloff Taylor & Zafman, December 23, 2004: US20040256724-A1


Numerous embodiments of a stacked device filler and a method of formation are disclosed. In one embodiment, a method of forming a stacked device filler comprises forming a material layer between two or more substrates of a stacked device, and causing a reaction in at least a portion of the material, ...


4
Grant M Kloster, David Staintes, Shriram Ramanathan: Method of forming a stacked device filler. Blakely Sokoloff Taylor & Zafman, December 23, 2004: US20040256736-A1


Numerous embodiments of a stacked device filler and a method of formation are disclosed. In one embodiment, a method of forming a stacked device filler comprises forming a material layer between two or more substrates of a stacked device, and causing a reaction in at least a portion of the material, ...



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