1
Katsuyuki Musaka
Katsuyuki Musaka, Shinzuke Mizuno: Method of forming a thin film for a semiconductor device. Applied Materials, Birgit E Morris, Michael B Einschlag, November 5, 1996: US05571571 (32 worldwide citation)


A method of forming conformal, high quality silicon oxide films that can be deposited over closely spaced, submicron lines and spaces without the formation of voids, comprises forming a plasma of TEOS and a selected halogen-containing gas in certain ratios. By proper control of the energy sources th ...


2
Katsuyuki Musaka
Katsuyuki Musaka: Method of forming a thin film for a semiconductor device. Applied Materials, Birgit Morris, August 19, 2003: US06607790 (3 worldwide citation)


The present invention relates to a plasma-enhanced chemical vapor deposition (PECVD) method of depositing a thin layer of a material, such as silicon dioxide, on the surface of a body, such as a semiconductor substrate. The method includes forming in a deposition chamber a plasma by means of two ele ...


3
Masanobu Iwasaki, Hiromi Itoh: Method of forming thin film for semiconductor device. Mitsubishi Denki Kabushiki Kaisha, Lowe Price LeBlanc & Becker, July 4, 1995: US05429991 (22 worldwide citation)


A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming ...


4
Masanobu Iwasaki, Hiromi Itoh: Method of an apparatus for forming thin film for semiconductor device. Mitsubishi Denki Kabushiki Kaisha, Lowe Price LeBlanc & Becker, August 31, 1993: US05240505 (12 worldwide citation)


A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming ...


5
Hwang Chul Ju: Cvd of silicon containing film using si2h6. Hwang Chul Ju, August 11, 1999: EP0935284-A1 (6 worldwide citation)


A method of forming a thin film for a semiconductor device which applies disilane (Si2H6) to chemical vapor deposition is capable of improving deposition rate and step coverage of the thin film although the thin film is deposited at lower temperatures, thereby improving productivity and reliability ...



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